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<p>State-of-the-art nanolithography uses extreme ultraviolet (EUV) radiation at 13.5 nm emitted from tin laser-produced plasma (LPP), driven by a 10.6&#xa0;µm&#xa0;wavelength CO<sub>2</sub>-gas laser, to create the smallest features on semiconductor devices. Advances in solid-state laser technologies have led to the alternative concept of a 2-µm-wavelength-driven LPP as a promising candidate for a more efficient and more powerful EUV source. We present the complete energy partitioning for a 2&#xa0;µm wavelength-driven LPP, reconstructing the full input laser energy. With ∼70 %, most of the energy goes into photons, the largest part of which is emitted in the 5–80 nm wavelength range. Plasma ions contribute ∼30&#xa0;% of the energy, and we find that this fraction decreases as a function of the laser intensity, a key insight in finding pathways to optimize plasma for industrial application. Our results offer insight into the energy partitioning of EUV-emitting plasmas for research and industrial nanolithography alike, and provide a benchmark for plasma light source development.</p>

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Full energy partitioning in 2 μm wavelength laser driven extreme ultraviolet sources

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月17日

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  • D. J. Engels,
  • F. M. Kohlmeier,
  • Y. Mostafa,
  • E. J. Salumbides,
  • B. W. Slotema,
  • R. Hoekstra,
  • J. Sheil,
  • W. Ubachs,
  • O. O. Versolato

摘要

State-of-the-art nanolithography uses extreme ultraviolet (EUV) radiation at 13.5 nm emitted from tin laser-produced plasma (LPP), driven by a 10.6 µm wavelength CO2-gas laser, to create the smallest features on semiconductor devices. Advances in solid-state laser technologies have led to the alternative concept of a 2-µm-wavelength-driven LPP as a promising candidate for a more efficient and more powerful EUV source. We present the complete energy partitioning for a 2 µm wavelength-driven LPP, reconstructing the full input laser energy. With ∼70 %, most of the energy goes into photons, the largest part of which is emitted in the 5–80 nm wavelength range. Plasma ions contribute ∼30 % of the energy, and we find that this fraction decreases as a function of the laser intensity, a key insight in finding pathways to optimize plasma for industrial application. Our results offer insight into the energy partitioning of EUV-emitting plasmas for research and industrial nanolithography alike, and provide a benchmark for plasma light source development.