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<p>Single-ended, programmable spin logic devices driven by field-free spin-orbit torque (SOT) are promising for future in-memory computing architectures, which can offer simplified circuitry, high integration density, and low power consumption. Here, we demonstrate field-free SOT-driven switching of slightly tilted perpendicular magnetization in Fe<sub><i>x</i></sub>Gd<sub>100-<i>x</i></sub> ferrimagnetic films prepared by oblique sputtering. Then we realize six programmable logic functions (AND, OR, NAND, NOR, Always ON/OFF) in a single device, by designing a single-ended spin logic device and introducing a double-pulse time-delay coupled scheme. These functions arise from the nonlinear dependence of the critical switching current on the pulse width and amplitude. Furthermore, it is revealed that the field-free magnetization switching is governed by domain wall motion, induced by SOT effective fields arising from the spatial inversion symmetry-broken inner electric field due to the oblique sputtering. Our work provides an energy-efficient route for implementing compact, programmable spintronic logic-in-memory systems using time-domain pulse engineering.</p><p></p>

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Single-ended programmable spin logic devices based on FexGd100-x ferrimagnetic films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月7日

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  • Yuzhi Xing,
  • Dong Wang,
  • Houning Song,
  • Wenxiao Zhao,
  • Lin Wei,
  • Shishen Yan,
  • Xinglong Ye,
  • Yufeng Tian,
  • Lihui Bai,
  • Yanxue Chen

摘要

Single-ended, programmable spin logic devices driven by field-free spin-orbit torque (SOT) are promising for future in-memory computing architectures, which can offer simplified circuitry, high integration density, and low power consumption. Here, we demonstrate field-free SOT-driven switching of slightly tilted perpendicular magnetization in FexGd100-x ferrimagnetic films prepared by oblique sputtering. Then we realize six programmable logic functions (AND, OR, NAND, NOR, Always ON/OFF) in a single device, by designing a single-ended spin logic device and introducing a double-pulse time-delay coupled scheme. These functions arise from the nonlinear dependence of the critical switching current on the pulse width and amplitude. Furthermore, it is revealed that the field-free magnetization switching is governed by domain wall motion, induced by SOT effective fields arising from the spatial inversion symmetry-broken inner electric field due to the oblique sputtering. Our work provides an energy-efficient route for implementing compact, programmable spintronic logic-in-memory systems using time-domain pulse engineering.