<p>The discovery of the superconducting diode effect (SDE) is recognised as a step forward in the development of superconducting electronics. Despite the diversity in the hosting materials and device designs, SDE is usually operated in a single mode which is enabled by either out-of-plane or in-plane magnetic field/magnetization. In this work, we report the realization of a dual-mode SDE in 2H-NbS<sub>2</sub>/2H-NbSe<sub>2</sub> heterostructures where both the out-of-plane magnetic field <i>B</i><sub>⊥</sub> and in-plane magnetic field <i>B</i><sub>∣∣</sub> can independently generate and manipulate SDE. The two modes share similar diode efficiency but exhibit two orders difference in the operational field and have rather different temperature dependence. The dual-mode SDE is most likely a result of symmetry breaking along multiple orientations. In order to showcase the potential of the dual-mode SDE in realizing advanced superconducting functionality, we propose to use <i>B</i><sub>⊥</sub>-induced SDE to implement fast polarity-switching functionality and <i>B</i><sub>∣∣</sub>-induced SDE to realize high-fidelity functionality.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Dual-mode superconducting diode effect enabled by in-plane and out-of-plane magnetic field

  • Huai Guan,
  • Chengyu Yan,
  • Zhenyu Zhang,
  • Yiheng Sun,
  • Qiao Chen,
  • Xinming Zhao,
  • Chuanwen Zhao,
  • Bo Gao,
  • James Jun He,
  • Shun Wang

摘要

The discovery of the superconducting diode effect (SDE) is recognised as a step forward in the development of superconducting electronics. Despite the diversity in the hosting materials and device designs, SDE is usually operated in a single mode which is enabled by either out-of-plane or in-plane magnetic field/magnetization. In this work, we report the realization of a dual-mode SDE in 2H-NbS2/2H-NbSe2 heterostructures where both the out-of-plane magnetic field B and in-plane magnetic field B∣∣ can independently generate and manipulate SDE. The two modes share similar diode efficiency but exhibit two orders difference in the operational field and have rather different temperature dependence. The dual-mode SDE is most likely a result of symmetry breaking along multiple orientations. In order to showcase the potential of the dual-mode SDE in realizing advanced superconducting functionality, we propose to use B-induced SDE to implement fast polarity-switching functionality and B∣∣-induced SDE to realize high-fidelity functionality.