<p>Relaxor ferroelectrics (RFEs) are renowned for excellent electromechanical properties, primarily driven by the presence of polar nanoregions (PNRs). Recent advances, including the entropy-increase strategy via various designs, enhance PNR density and disorder, but the underlying collective dynamics of PNRs and their impact on RFE electrical properties have received less attention. Here, we investigate the role of PNR collective dynamics by using K<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub> (KBT) as a model system and progressively enhancing PNR density through doping with Bi(Ni<sub>0.5</sub>Zr<sub>0.5</sub>)O<sub>3</sub>. It significantly improves KBT’s electrostrain and energy storge. We observe 10-1000 nm PNR mesostructures self-assembled from 2-4 nm PNRs, and via the Gray-Scott model, confirm their origin from Turing instability in PNR groups (a universal nanoscale self-organization mechanism for RFEs). And the jamming effects within these mesostructures play a key role in enhancing electrical properties. Our findings shed light on RFE’s structure-property relationships and provide guiding principles for designing other high-performance RFEs.</p>

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Collective dynamics of polar nanoregions enhance electrical properties via solid-solution-induced entropy increase in KBT relaxors

  • Jinjian Guo,
  • Kang Zhao,
  • Yishan An,
  • Zhiyong Quan,
  • Mankang Zhu,
  • Xiaohong Xu,
  • Xuedong Bai

摘要

Relaxor ferroelectrics (RFEs) are renowned for excellent electromechanical properties, primarily driven by the presence of polar nanoregions (PNRs). Recent advances, including the entropy-increase strategy via various designs, enhance PNR density and disorder, but the underlying collective dynamics of PNRs and their impact on RFE electrical properties have received less attention. Here, we investigate the role of PNR collective dynamics by using K0.5Bi0.5TiO3 (KBT) as a model system and progressively enhancing PNR density through doping with Bi(Ni0.5Zr0.5)O3. It significantly improves KBT’s electrostrain and energy storge. We observe 10-1000 nm PNR mesostructures self-assembled from 2-4 nm PNRs, and via the Gray-Scott model, confirm their origin from Turing instability in PNR groups (a universal nanoscale self-organization mechanism for RFEs). And the jamming effects within these mesostructures play a key role in enhancing electrical properties. Our findings shed light on RFE’s structure-property relationships and provide guiding principles for designing other high-performance RFEs.