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<p>Recently, the hybrid skin-topological effect (HSTE), in which the topological modes localize at corners, has attracted significant research interest. While most relevant studies are carried out in ordered systems, the interplay between disorder and the HSTE remains unexplored. Here we investigate a type of HSTE induced by the topological Anderson transition, termed as the hybrid skin-topological-Anderson effect (HSTAE). The HSTAE modes maintain localization characteristics as the model size increases and the localized position can be modulated by the on-site gain/loss. Furthermore, our analysis reveals that disorder not only extends the range of topologically non-trivial phases, but also causes the deformation of gapless phase regions. This work explores the interplay between topological Anderson insulators and non-Hermitian effects, opening up potential applications in non-Hermitian topological devices.</p>

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Hybrid skin-topological-Anderson effect in systems with gain and loss

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年11月17日

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  • Shuqiao Li,
  • Linyuan Dou,
  • Chenyu Zhang,
  • Tianshu Jiang,
  • Zeyong Wei,
  • Zhanshan Wang,
  • Xinbin Cheng

摘要

Recently, the hybrid skin-topological effect (HSTE), in which the topological modes localize at corners, has attracted significant research interest. While most relevant studies are carried out in ordered systems, the interplay between disorder and the HSTE remains unexplored. Here we investigate a type of HSTE induced by the topological Anderson transition, termed as the hybrid skin-topological-Anderson effect (HSTAE). The HSTAE modes maintain localization characteristics as the model size increases and the localized position can be modulated by the on-site gain/loss. Furthermore, our analysis reveals that disorder not only extends the range of topologically non-trivial phases, but also causes the deformation of gapless phase regions. This work explores the interplay between topological Anderson insulators and non-Hermitian effects, opening up potential applications in non-Hermitian topological devices.