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<p>The interaction of terahertz (THz) wave with condensed matter material is utilized to investigate the low-energy electronic behaviors and topological properties near its equilibrium state, for example, transport characteristics of topological semimetals. Notably, antiferromagnetic Weyl semimetal (WSM) Mn<sub>3</sub>Sn has attracted vast attention owing to markedly anomalous effects, such as room-temperature anomalous Hall effect. Here, we investigate the thickness-dependent THz conductivity of Mn<sub>3</sub>Sn epitaxial films by polarization-resolved THz time-domain spectroscopy, which can be attributed to the Berry curvature induced near the Weyl nodes in the momentum space. The THz longitudinal conductivities of high-quality Mn<sub>3</sub>Sn epitaxial thin films are anisotropic along different crystal orientations with carrier localization behavior, which are well described by the Drude-Smith model. By combining first-principles calculations with a comparison between theoretical and experimental carrier concentrations, this study demonstrated that the THz conductivity of the Mn<sub>3</sub>Sn thin film is jointly determined by intraband transitions of free carriers. These results have deepened the understanding of THz conductivity in the antiferromagnetic WSM Mn<sub>3</sub>Sn epitaxial thin films.</p><p></p>

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Anisotropic terahertz conductivity in antiferromagnet Weyl semimetal Mn3Sn epitaxial thin films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月26日

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  • Dong Gao,
  • Tianyu Zhang,
  • Tinggui Yin,
  • Fu Tang,
  • Ting Yang,
  • Weihao Yang,
  • Dengfu Deng,
  • Zechuan Bin,
  • Qindong Xie,
  • Jun Qin,
  • Xiao Liang,
  • Min Hu,
  • Lei Bi

摘要

The interaction of terahertz (THz) wave with condensed matter material is utilized to investigate the low-energy electronic behaviors and topological properties near its equilibrium state, for example, transport characteristics of topological semimetals. Notably, antiferromagnetic Weyl semimetal (WSM) Mn3Sn has attracted vast attention owing to markedly anomalous effects, such as room-temperature anomalous Hall effect. Here, we investigate the thickness-dependent THz conductivity of Mn3Sn epitaxial films by polarization-resolved THz time-domain spectroscopy, which can be attributed to the Berry curvature induced near the Weyl nodes in the momentum space. The THz longitudinal conductivities of high-quality Mn3Sn epitaxial thin films are anisotropic along different crystal orientations with carrier localization behavior, which are well described by the Drude-Smith model. By combining first-principles calculations with a comparison between theoretical and experimental carrier concentrations, this study demonstrated that the THz conductivity of the Mn3Sn thin film is jointly determined by intraband transitions of free carriers. These results have deepened the understanding of THz conductivity in the antiferromagnetic WSM Mn3Sn epitaxial thin films.