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<p>Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material’s intrinsic properties. Recent advancements revealed that the displacement of thermally excited charge carriers under a high electric field induces a second-order nonlinearity in silicon nitride, thus enabling the linear EO effect in this platform regardless of the material’s inversion symmetry. In this work, we introduce optically-assisted poling of a silicon nitride microring resonator, removing the need for high-temperature processing of the device. The optical stimulation of charges avoids the technical constraints due to elevated temperature. By optimizing the poling process, we experimentally obtain a long-term effective second-order nonlinearity <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="42005_2025_2071_Article_IEq1.gif" Format="GIF" Height="25" Rendition="HTML" Resolution="72" Type="Linedraw" Width="28" /> </InlineMediaObject> <EquationSource Format="TEX">\({\chi }_{{{{\rm{eff}}}}}^{(2)}\)</EquationSource> <EquationSource Format="MATHML"><math> <msubsup> <mrow> <mi>χ</mi> </mrow> <mrow> <mi mathvariant="normal">eff</mi> </mrow> <mrow> <mrow> <mo>(</mo> <mrow> <mn>2</mn> </mrow> <mo>)</mo> </mrow> </mrow> </msubsup> </math></EquationSource> </InlineEquation> of 1.218 pm/V. Additionally, we measure the high-speed EO response of the modulator, showing a bandwidth of 4 GHz, only limited by the quality factor of the microring resonator. This work goes towards the implementation of monolithic, compact silicon nitride EO modulators, a necessary component for high-density integrated optical signal processing.</p>

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Monolithic silicon nitride electro-optic modulator enabled by optically-assisted poling

  • 期刊论文

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  • 发表日期：

    2025年4月8日

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  • Christian Lafforgue,
  • Boris Zabelich,
  • Camille-Sophie Brès

摘要

Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material’s intrinsic properties. Recent advancements revealed that the displacement of thermally excited charge carriers under a high electric field induces a second-order nonlinearity in silicon nitride, thus enabling the linear EO effect in this platform regardless of the material’s inversion symmetry. In this work, we introduce optically-assisted poling of a silicon nitride microring resonator, removing the need for high-temperature processing of the device. The optical stimulation of charges avoids the technical constraints due to elevated temperature. By optimizing the poling process, we experimentally obtain a long-term effective second-order nonlinearity \({\chi }_{{{{\rm{eff}}}}}^{(2)}\) χ eff ( 2 ) of 1.218 pm/V. Additionally, we measure the high-speed EO response of the modulator, showing a bandwidth of 4 GHz, only limited by the quality factor of the microring resonator. This work goes towards the implementation of monolithic, compact silicon nitride EO modulators, a necessary component for high-density integrated optical signal processing.