<p>Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band color centers in silicon for high-fidelity spin-photon interfaces: T and Cu (transition metal) centers. During T center generation process, we observed the formation and dissolution of other color centers, including the copper-silver related centers with a doublet line around 1312 nm (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="42005_2025_1954_Article_IEq1.gif" Format="GIF" Height="21" Rendition="HTML" Resolution="72" Type="Linedraw" Width="30" /> </InlineMediaObject> <EquationSource Format="TEX">${{{\rm{Cu}}}}_{n}^{0}$</EquationSource> <EquationSource Format="MATHML"><math> <msubsup> <mrow> <mi mathvariant="normal">Cu</mi> </mrow> <mrow> <mi>n</mi> </mrow> <mrow> <mn>0</mn> </mrow> </msubsup> </math></EquationSource> </InlineEquation>), near the optical fiber zero dispersion wavelength (around 1310 nm). We then investigated the photophysics of both T and Cu centers, focusing on their emission spectra and spin properties. The <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="42005_2025_1954_Article_IEq2.gif" Format="GIF" Height="21" Rendition="HTML" Resolution="72" Type="Linedraw" Width="28" /> </InlineMediaObject> <EquationSource Format="TEX">${{{\rm{Cu}}}}_{0}^{0}$</EquationSource> <EquationSource Format="MATHML"><math> <msubsup> <mrow> <mi mathvariant="normal">Cu</mi> </mrow> <mrow> <mn>0</mn> </mrow> <mrow> <mn>0</mn> </mrow> </msubsup> </math></EquationSource> </InlineEquation> line under a 0.5 T magnetic field demonstrated a 25% broadening, potentially due to spin degeneracy, suggesting that this center can be a promising alternative to T centers.</p>

Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

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2025年1月27日

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Murat Can Sarihan,
Jiahui Huang,
Jin Ho Kang,
Cody Fan,
Wei Liu,
Khalifa M. Azizur-Rahman,
Baolai Liang,
Chee Wei Wong

摘要

Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band color centers in silicon for high-fidelity spin-photon interfaces: T and *Cu (transition metal) centers. During T center generation process, we observed the formation and dissolution of other color centers, including the copper-silver related centers with a doublet line around 1312 nm (* ${{{\rm{Cu}}}}_{n}^{0}$ ${Cu}_{n}^{0}$ ), near the optical fiber zero dispersion wavelength (around 1310 nm). We then investigated the photophysics of both T and *Cu centers, focusing on their emission spectra and spin properties. The * ${{{\rm{Cu}}}}_{0}^{0}$ ${Cu}_{0}^{0}$ line under a 0.5 T magnetic field demonstrated a 25% broadening, potentially due to spin degeneracy, suggesting that this center can be a promising alternative to T centers.