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<p>The in-plane-magnetic-field-induced Hall effect (IPHE) observed in Weyl semimetals and <i>PT</i>-symmetric antiferromagnets has attracted increasing attention, as it breaks the stereotype that the Hall effect is induced by an out-of-plane magnetic field or magnetization. To date, the IPHE has been discussed mainly for materials with low-symmetry crystal/magnetic point groups. Here, we show that even if symmetry forbids an inherent IPHE that arises from any mechanism, an apparent IPHE can be generated by selecting a low-symmetry crystalline plane for measurement. For rutile RuO<sub>2</sub>, although its high symmetry forbids an inherent IPHE, films grown along the low-symmetry (1 1 1) and (1 0 1) orientations are found to exhibit a distinct IPHE. The in-plane Hall coefficients are quantitatively reproduced by referring to the out-of-plane Hall coefficients measured for the high-symmetry (1 0 0) and (0 0 1) planes, indicating that the observed IPHE is caused by a superposition of inequivalent out-of-plane Hall effects. Similar behaviour is also observed for paramagnetic rutile systems, indicating the ubiquity of the apparent IPHE in electronic and spintronic devices with low-symmetry crystalline planes.</p>

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Unveiling an in-plane Hall effect in rutile RuO2 films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月18日

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  • Meng Wang,
  • Jianbing Zhang,
  • Di Tian,
  • Pu Yu,
  • Fumitaka Kagawa

摘要

The in-plane-magnetic-field-induced Hall effect (IPHE) observed in Weyl semimetals and PT-symmetric antiferromagnets has attracted increasing attention, as it breaks the stereotype that the Hall effect is induced by an out-of-plane magnetic field or magnetization. To date, the IPHE has been discussed mainly for materials with low-symmetry crystal/magnetic point groups. Here, we show that even if symmetry forbids an inherent IPHE that arises from any mechanism, an apparent IPHE can be generated by selecting a low-symmetry crystalline plane for measurement. For rutile RuO2, although its high symmetry forbids an inherent IPHE, films grown along the low-symmetry (1 1 1) and (1 0 1) orientations are found to exhibit a distinct IPHE. The in-plane Hall coefficients are quantitatively reproduced by referring to the out-of-plane Hall coefficients measured for the high-symmetry (1 0 0) and (0 0 1) planes, indicating that the observed IPHE is caused by a superposition of inequivalent out-of-plane Hall effects. Similar behaviour is also observed for paramagnetic rutile systems, indicating the ubiquity of the apparent IPHE in electronic and spintronic devices with low-symmetry crystalline planes.