Scholarlink

<p>High-energy ultraviolet (UVC) irradiation of metal oxides (MOs, e.g., TiO<sub>2</sub>) results in photoinduced surface oxygen vacancies (PI-SOVs), which can change the charge carrier (e.g., electrons and holes) migration dynamics. Although PI-SOVs alter the electronic and chemical properties of MOs, there is no consensus on the penetration depth of the UVC irradiation, which induces PI-SOVs and is an important variable for the design and operation of MO-based systems. Here, we performed optical transmission and time-resolved atomic force microscopy measurements on back-illuminated TiO<sub>2</sub> samples. Our experiments show that the effect of UVC irradiation on MOs can be observed hundreds of micrometers across the bulk, i.e., orders of magnitude larger than previously postulated values. We believe that our findings would be important both for the fundamental understanding of UVC irradiation/penetration and for device design/fabrication processes.</p><p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ultraviolet irradiation penetration depth on TiO2

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年3月16日

查看全文
  • Bugrahan Guner,
  • Mohammad Safikhani-Mahmoudi,
  • Fengmiao Li,
  • Ke Zou,
  • Omur E. Dagdeviren

摘要

High-energy ultraviolet (UVC) irradiation of metal oxides (MOs, e.g., TiO2) results in photoinduced surface oxygen vacancies (PI-SOVs), which can change the charge carrier (e.g., electrons and holes) migration dynamics. Although PI-SOVs alter the electronic and chemical properties of MOs, there is no consensus on the penetration depth of the UVC irradiation, which induces PI-SOVs and is an important variable for the design and operation of MO-based systems. Here, we performed optical transmission and time-resolved atomic force microscopy measurements on back-illuminated TiO2 samples. Our experiments show that the effect of UVC irradiation on MOs can be observed hundreds of micrometers across the bulk, i.e., orders of magnitude larger than previously postulated values. We believe that our findings would be important both for the fundamental understanding of UVC irradiation/penetration and for device design/fabrication processes.