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<p>High transconductance is a key performance metric in field-effect transistors, directly influencing voltage gain, switching speed and bandwidth. In two-dimensional field-effect transistors, achieving a high transconductance requires a low equivalent oxide thickness, scaled channel length and preserved carrier mobility—three factors that are difficult to optimize simultaneously. Reduced equivalent oxide thickness (less than 1 nm) can be achieved with high-<i>κ</i>-dielectric integration, but such scaling often introduces dielectric-related scattering that degrades mobility and limits transconductance. Here we show that an epitaxial interface engineering approach can be used to create monolayer molybdenum disulfide top-gate field-effect transistors with a high transconductance of 0.45 mS µm<sup>−1</sup> at an equivalent oxide thickness of around 1 nm. We grow an epitaxial aluminium film directly on molybdenum disulfide in an ultrahigh vacuum, which is followed by in situ low-pressure oxidation to form an epitaxially derived aluminium oxide interfacial layer. This layer supports uniform integration of hafnium oxide and suppresses dielectric-induced scattering, leading to strong gate control without notable mobility degradation.</p>

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High-transconductance molybdenum disulfide top-gate transistors using epitaxial interface engineering

  • 期刊论文

  • 发表日期：

    2026年7月31日

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  • Yuan-Chun Su,
  • Po-Sen Mao,
  • Chih-Yao Shih,
  • Shih-Ting Wang,
  • Yun-Yang Shen,
  • Zih-Siang Jian,
  • Hsiang-Chi Hu,
  • Wei-Chen Tseng,
  • Hsin-Ya Sung,
  • Chih-Yen Lin,
  • Zi-Yun Fong,
  • Yu-Tung Lin,
  • Kun-An Chiu,
  • Fong-Zhi Chen,
  • Ming-Yang Li,
  • Wen-Wei Wu,
  • Chao-Ching Cheng,
  • Chih-I. Wu,
  • Tsung-En Lee,
  • Iuliana P. Radu,
  • Wen-Hao Chang

摘要

High transconductance is a key performance metric in field-effect transistors, directly influencing voltage gain, switching speed and bandwidth. In two-dimensional field-effect transistors, achieving a high transconductance requires a low equivalent oxide thickness, scaled channel length and preserved carrier mobility—three factors that are difficult to optimize simultaneously. Reduced equivalent oxide thickness (less than 1 nm) can be achieved with high-κ-dielectric integration, but such scaling often introduces dielectric-related scattering that degrades mobility and limits transconductance. Here we show that an epitaxial interface engineering approach can be used to create monolayer molybdenum disulfide top-gate field-effect transistors with a high transconductance of 0.45 mS µm−1 at an equivalent oxide thickness of around 1 nm. We grow an epitaxial aluminium film directly on molybdenum disulfide in an ultrahigh vacuum, which is followed by in situ low-pressure oxidation to form an epitaxially derived aluminium oxide interfacial layer. This layer supports uniform integration of hafnium oxide and suppresses dielectric-induced scattering, leading to strong gate control without notable mobility degradation.