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<p>Inorganic colloidal quantum dot light-emitting diodes could be used to build next-generation electroluminescent displays due to their colour properties and electrical stability. However, to create high-resolution and large-area displays, a pixel integration method is required, which can deposit quantum dot arrays on an active-matrix backplane and maintain uniformity and precision, without colour cross-contamination. Here we report a cracking-assisted transfer printing technology that can be used to pattern high-resolution full-colour pixel arrays over large areas. The technology uses a controlled cracking process to fracture interparticle cohesive bonds between quantum dots. This facilitates subsequent pick-up and transfer to a thin-film transistor backplane with high precision. With the technology, we achieve pixels down to a size of 600 nm with electroluminescent emission and uniform pixelization over areas up to 4 inches. We create a cadmium-free full-colour active-matrix display with a resolution of 341 pixels per inch, as well as a blue active-matrix display with a flexible form factor. Furthermore, the cracking-assisted transfer printing can improve electroluminescence performance—with higher maximum luminance and operational lifetime than other quantum dot patterning techniques—through precise nano-interface control and high quantum dot packing density.</p>

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A cracking-assisted transfer printing technology for high-resolution quantum dot light-emitting diode displays

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月17日

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  • Jeong-Wan Jo,
  • Yoonwoo Kim,
  • Sanghyo Lee,
  • Jiajie Yang,
  • Yaron Bernstein,
  • Giovanni Francesco Cotella,
  • Feng Zhao,
  • Quan Lyu,
  • Thomas E. Davies,
  • Faris Abualnaja,
  • Greg Chu,
  • Hannah J. Joyce,
  • Stephan Hofmann,
  • Jack A. Alexander-Webber,
  • Bo Hou,
  • Sung-Min Jung,
  • Gehan A. J. Amaratunga,
  • Jong Min Kim

摘要

Inorganic colloidal quantum dot light-emitting diodes could be used to build next-generation electroluminescent displays due to their colour properties and electrical stability. However, to create high-resolution and large-area displays, a pixel integration method is required, which can deposit quantum dot arrays on an active-matrix backplane and maintain uniformity and precision, without colour cross-contamination. Here we report a cracking-assisted transfer printing technology that can be used to pattern high-resolution full-colour pixel arrays over large areas. The technology uses a controlled cracking process to fracture interparticle cohesive bonds between quantum dots. This facilitates subsequent pick-up and transfer to a thin-film transistor backplane with high precision. With the technology, we achieve pixels down to a size of 600 nm with electroluminescent emission and uniform pixelization over areas up to 4 inches. We create a cadmium-free full-colour active-matrix display with a resolution of 341 pixels per inch, as well as a blue active-matrix display with a flexible form factor. Furthermore, the cracking-assisted transfer printing can improve electroluminescence performance—with higher maximum luminance and operational lifetime than other quantum dot patterning techniques—through precise nano-interface control and high quantum dot packing density.