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<p>Two-dimensional semiconductors are potential channel materials for future scaled complementary transistor technologies due to their high carrier mobility and strong immunity to the short-channel effect. However, the electrical performance of p-type transistors is still far below that of their n-type counterparts. Here we report high-performance p-type monolayer tungsten diselenide transistors with a hole mobility of 137 cm<sup>2 </sup>V<sup>−1</sup> s<sup>−1</sup> and a contact resistance of approximately 560 Ω µm at room temperature. Our approach uses an industry-compatible and tunable oxygen-incorporated technique to heal the defect states. A scaled p-type monolayer tungsten diselenide transistor with a channel length of 45 nm exhibits an on-state current of 1,245 μA μm<sup>−1</sup> and an on/off ratio of ~10<sup>9</sup>.</p>

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High-performance p-type monolayer tungsten diselenide transistors

  • 期刊论文

  • 发表日期：

    2026年5月20日

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  • Lei Sun,
  • Tingting Gao,
  • Xiubin Li,
  • Teresa Cusati,
  • Damiano Marian,
  • Giuseppe Iannaccone,
  • Jing Li,
  • Yuhui He,
  • Jialin Yang,
  • Shengli Zhang,
  • Gianluca Fiori,
  • Xuefei Li,
  • Xiangshui Miao

摘要

Two-dimensional semiconductors are potential channel materials for future scaled complementary transistor technologies due to their high carrier mobility and strong immunity to the short-channel effect. However, the electrical performance of p-type transistors is still far below that of their n-type counterparts. Here we report high-performance p-type monolayer tungsten diselenide transistors with a hole mobility of 137 cm2 V−1 s−1 and a contact resistance of approximately 560 Ω µm at room temperature. Our approach uses an industry-compatible and tunable oxygen-incorporated technique to heal the defect states. A scaled p-type monolayer tungsten diselenide transistor with a channel length of 45 nm exhibits an on-state current of 1,245 μA μm−1 and an on/off ratio of ~109.