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<p>The development of the sixth generation of wireless communications technology requires terminals that can operate at frequencies above 100 GHz. For human-centric applications, these terminals should also be flexible and have low power. However, current flexible radio-frequency transistors typically have lower maximum frequencies, in part due to the poor thermal conductivity of flexible substrates. Here we report radio-frequency transistors that are based on aligned carbon nanotube arrays on flexible substrates, having current-gain cut-off frequencies (<i>f</i><sub>T</sub>) and power-gain cut-off frequencies (<i>f</i><sub>max</sub>) above 100 GHz. This is achieved by using electrothermal co-design to improve the heat dissipation and radio-frequency performance of the devices. The transistors exhibit an on-state current of 0.947 mA µm<sup>−1</sup>, a transconductance of 0.728 mS µm<sup>−1</sup>, a peak extrinsic <i>f</i><sub>T</sub> of 152 GHz, a peak extrinsic <i>f</i><sub>max</sub> of 102 GHz and a power consumption under 200 mW mm<sup>−1</sup>. We also show that the devices can be used to create flexible radio-frequency amplifiers with an output power of 64 mW mm<sup>−1</sup> and an 11-dB power gain in the K band.</p>

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Flexible radio-frequency carbon nanotube transistors operating at frequencies above 100 GHz

  • 期刊论文

  • 发表日期：

    2026年5月12日

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  • Fan Xia,
  • Tian Xia,
  • Haotian Su,
  • Lanyue Gan,
  • Qianlan Hu,
  • Wanyi Wang,
  • Ruyi Huang,
  • Tianshun Bai,
  • Yufan Chen,
  • Chao Ma,
  • Guanhua Long,
  • Shan X. Wang,
  • Eric Pop,
  • Lian-Mao Peng,
  • Youfan Hu

摘要

The development of the sixth generation of wireless communications technology requires terminals that can operate at frequencies above 100 GHz. For human-centric applications, these terminals should also be flexible and have low power. However, current flexible radio-frequency transistors typically have lower maximum frequencies, in part due to the poor thermal conductivity of flexible substrates. Here we report radio-frequency transistors that are based on aligned carbon nanotube arrays on flexible substrates, having current-gain cut-off frequencies (fT) and power-gain cut-off frequencies (fmax) above 100 GHz. This is achieved by using electrothermal co-design to improve the heat dissipation and radio-frequency performance of the devices. The transistors exhibit an on-state current of 0.947 mA µm−1, a transconductance of 0.728 mS µm−1, a peak extrinsic fT of 152 GHz, a peak extrinsic fmax of 102 GHz and a power consumption under 200 mW mm−1. We also show that the devices can be used to create flexible radio-frequency amplifiers with an output power of 64 mW mm−1 and an 11-dB power gain in the K band.