<p>Atomically thin, single-crystalline transition metal dichalcogenides grown by chemical vapour deposition on sapphire substrates combine excellent mechanical flexibility with high electronic performance, making them attractive semiconductors for flexible electronics. However, conventional wet-transfer processes used to integrate the materials onto flexible substrates often introduce surface contamination that degrades device performance. Here we report a wafer-scale dry-transfer strategy based on a high-<i>κ</i> dielectric aluminium oxide (Al₂O₃) interlayer, enabling the integration of 4-inch single-crystalline molybdenum disulfide (MoS₂) films onto flexible substrates. The approach requires no contact with polymers or solvents, thus preserving the intrinsic electronic properties of the MoS₂. Flexible field-effect transistor arrays fabricated using this method exhibit a maximum mobility of 117 cm²V⁻¹ s⁻¹, subthreshold swing of 68.8 mV dec⁻¹ and on/off ratio of 10¹², comparable to values achieved on rigid substrates. We further demonstrate MoS₂-based flexible inverters operating in the subthreshold regime with a gain of 218 and power consumption of 1.4 pW µm⁻¹. Finally, we integrate an active-matrix tactile sensing system driven by flexible MoS₂ transistor arrays onto a robotic gripper, providing real-time tactile mapping and object recognition.</p>