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<p>In the future, the miniaturization of integrated circuits will require copper wires to be scaled down in the back-end-of-line (BEOL) process. This will, in turn, require a scaling down of the barrier and liner coatings that prevent copper diffusion and ensure metal adhesion to the dielectric. Here we show that thin (&lt;1 nm) and conformal tungsten disulfide (WS<sub>2</sub>) layers can be grown on the wafer-scale using thermal atomic layer deposition without plasma at BEOL-compatible temperatures (350 °C) and can function as both barriers and liners for interconnects. We show that the WS<sub>2</sub> can reduce the resistivity of 10-nm-thick copper films by more than six orders of magnitude compared with a reference system (without the WS<sub>2</sub> layer) due to the improved wettability of copper. Monolayer WS<sub>2</sub> can prevent copper diffusion into silicon dioxide (SiO<sub>2</sub>) under thermal stress, and it is projected to improve wire lifetimes under electrical stress. Density functional theory calculations also highlight the potential of multilayer WS<sub>2</sub> films as diffusion barriers due to misaligned grain boundaries.</p>

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Low-temperature wafer-scale growth of ultrathin tungsten disulfide for bifunctional interconnect barriers and liners

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月31日

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  • Muhammed Juvaid Mangattuchali,
  • Hippolyte P.A.G. Astier,
  • Jing-Yang Chung,
  • Hao Tan,
  • Yue Xu,
  • Soumyadeep Sinha,
  • Chandan Das,
  • Yingqian Chen,
  • Pengmiao Zhang,
  • Edward Kurniawan Naland,
  • Taw Cun Chiam,
  • Lucas M. Sassi,
  • Ming Wah Wong,
  • John Sudijono,
  • Silvija Gradečak

摘要

In the future, the miniaturization of integrated circuits will require copper wires to be scaled down in the back-end-of-line (BEOL) process. This will, in turn, require a scaling down of the barrier and liner coatings that prevent copper diffusion and ensure metal adhesion to the dielectric. Here we show that thin (<1 nm) and conformal tungsten disulfide (WS2) layers can be grown on the wafer-scale using thermal atomic layer deposition without plasma at BEOL-compatible temperatures (350 °C) and can function as both barriers and liners for interconnects. We show that the WS2 can reduce the resistivity of 10-nm-thick copper films by more than six orders of magnitude compared with a reference system (without the WS2 layer) due to the improved wettability of copper. Monolayer WS2 can prevent copper diffusion into silicon dioxide (SiO2) under thermal stress, and it is projected to improve wire lifetimes under electrical stress. Density functional theory calculations also highlight the potential of multilayer WS2 films as diffusion barriers due to misaligned grain boundaries.