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<p>Gallium nitride (GaN) is used in solid-state lighting and in high-performance radio frequency and power electronics. However, due to inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, which limits studies of valence bands and hole transport engineering. Here we report high hole mobilities in a polarization-induced two-dimensional hole gas at a gallium nitride/aluminium nitride interface. The holes degenerately occupy two valence bands of GaN—the light-hole and heavy-hole bands—and have mobilities of 2,000 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and 400 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> at 2 K, respectively. We use Shubnikov–de Haas oscillations of holes from both valence bands to extract their respective sheet densities and quantum scattering times and the effective masses of light holes and heavy holes. The hole mobilities of our heterostructure highlight the possibility of developing cryogenic GaN complementary metal–oxide–semiconductor technology with potential applications in quantum computing control electronics.</p>

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High-mobility holes in gallium nitride and their quantum oscillations

  • 期刊论文

  • 发表日期：

    2026年3月23日

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  • Chuan F. C. Chang,
  • Joseph E. Dill,
  • Zexuan Zhang,
  • Jie-Cheng Chen,
  • Naomi Pieczulewski,
  • Samuel J. Bader,
  • Oscar E. Ayala Valenzuela,
  • Scott A. Crooker,
  • Fedor F. Balakirev,
  • Ross D. McDonald,
  • Jimy Encomendero,
  • David A. Muller,
  • Feliciano Giustino,
  • Debdeep Jena,
  • Huili Grace Xing

摘要

Gallium nitride (GaN) is used in solid-state lighting and in high-performance radio frequency and power electronics. However, due to inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, which limits studies of valence bands and hole transport engineering. Here we report high hole mobilities in a polarization-induced two-dimensional hole gas at a gallium nitride/aluminium nitride interface. The holes degenerately occupy two valence bands of GaN—the light-hole and heavy-hole bands—and have mobilities of 2,000 cm2 V−1 s−1 and 400 cm2 V−1 s−1 at 2 K, respectively. We use Shubnikov–de Haas oscillations of holes from both valence bands to extract their respective sheet densities and quantum scattering times and the effective masses of light holes and heavy holes. The hole mobilities of our heterostructure highlight the possibility of developing cryogenic GaN complementary metal–oxide–semiconductor technology with potential applications in quantum computing control electronics.