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<p>Two-dimensional semiconductors require atomically thin high-dielectric-constant dielectrics to create scaled electronic devices. Several candidate materials possess features such as scalability, low interface trap density and good dielectric properties, but many of these require transfer, which can create defects, whereas traditional dielectrics are difficult to grow on the inert surface of two-dimensional materials. Here we report the van der Waals epitaxial growth of single-crystalline antimony trioxide (Sb<sub>2</sub>O<sub>3</sub>) on the two-dimensional semiconductors tungsten diselenide (WSe<sub>2</sub>) and molybendum disulfide (MoS<sub>2</sub>). Using a two-step process to decouple nucleation and epitaxy, unidirectional Sb<sub>2</sub>O<sub>3</sub> domains are nucleated, grown and stitched to form single-crystal films with high uniformity within a growth time of less than 2 min. Monolayer Sb<sub>2</sub>O<sub>3</sub> has a dielectric constant of 6, a breakdown field of ~11 MV cm<sup>−1</sup> and a low interface trap density of 3.8 × 10<sup>10</sup> cm<sup>−2</sup> eV<sup>−1</sup>. Top-gate field-effect transistors using a monolayer Sb<sub>2</sub>O<sub>3</sub>/bilayer WSe<sub>2</sub> heterostructure (equivalent oxide thickness, 0.4 nm) exhibit subthreshold swings of 62 mV dec<sup>−1</sup>, on/off ratios of 10<sup>6</sup> and low gate leakage currents of 10<sup>−4</sup> A cm<sup>−2</sup>. We illustrate the scalability of the approach by creating 60 top-gate WSe<sub>2</sub> transistor arrays with 95% yield, and complementary logic inverters with a maximum voltage gain of 13 at <i>V</i><sub>dd</sub> = 1 V.</p>

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Epitaxially grown single-crystalline antimony trioxide dielectrics for two-dimensional electronics

  • 期刊论文

  • 发表日期：

    2026年2月27日

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  • Zimei Zhang,
  • Zhengwei Zhang,
  • Muhammad Zeeshan Saeed,
  • Miaomiao Li,
  • Dingyi Shen,
  • Zucheng Zhang,
  • Weiqi Dang,
  • Biao Qin,
  • Shanhao Li,
  • Ping Lu,
  • Jingmei Tang,
  • Xin Li,
  • Liang Chen,
  • Wengjing Xie,
  • Minghui Jin,
  • Feng Ding,
  • Yang Chen,
  • Dongyan Liu,
  • Mengjian Zhu,
  • Bo Li,
  • Ruixia Wu,
  • Jia Li,
  • Xidong Duan

摘要

Two-dimensional semiconductors require atomically thin high-dielectric-constant dielectrics to create scaled electronic devices. Several candidate materials possess features such as scalability, low interface trap density and good dielectric properties, but many of these require transfer, which can create defects, whereas traditional dielectrics are difficult to grow on the inert surface of two-dimensional materials. Here we report the van der Waals epitaxial growth of single-crystalline antimony trioxide (Sb2O3) on the two-dimensional semiconductors tungsten diselenide (WSe2) and molybendum disulfide (MoS2). Using a two-step process to decouple nucleation and epitaxy, unidirectional Sb2O3 domains are nucleated, grown and stitched to form single-crystal films with high uniformity within a growth time of less than 2 min. Monolayer Sb2O3 has a dielectric constant of 6, a breakdown field of ~11 MV cm−1 and a low interface trap density of 3.8 × 1010 cm−2 eV−1. Top-gate field-effect transistors using a monolayer Sb2O3/bilayer WSe2 heterostructure (equivalent oxide thickness, 0.4 nm) exhibit subthreshold swings of 62 mV dec−1, on/off ratios of 106 and low gate leakage currents of 10−4 A cm−2. We illustrate the scalability of the approach by creating 60 top-gate WSe2 transistor arrays with 95% yield, and complementary logic inverters with a maximum voltage gain of 13 at Vdd = 1 V.