Scholarlink

<p>High-electron-mobility transistors (HEMTs) made with group-III nitride (III nitride) materials are of potential use in high-temperature electronic applications including power electronics, communications, aerospace and space exploration. However, the demands of such applications make it essential to understand the thermal limits and performance evolution of III nitride HEMTs. Here we analyse the high-temperature operation of III nitride HEMTs, examining the impact on material properties, device structure and circuit-level behaviour. We explore the role of critical device layers—including barrier and channel engineering, substrate selection and passivation strategies—in mitigating high-temperature-induced effects, and evaluate the thermal stability of III nitride HEMTs in logic, radiofrequency and power electronics applications. We also highlight key remaining challenges in the design and optimization of III nitride devices for high-temperature applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High-temperature operation of group-III nitride high-electron-mobility transistors

  • 期刊论文

  • 发表日期：

    2026年2月20日

查看全文
  • Yi-Chen Liu,
  • Jacklyn Zhu,
  • John Niroula,
  • Hridibrata Pal,
  • Tomás Palacios,
  • Savannah R. Eisner

摘要

High-electron-mobility transistors (HEMTs) made with group-III nitride (III nitride) materials are of potential use in high-temperature electronic applications including power electronics, communications, aerospace and space exploration. However, the demands of such applications make it essential to understand the thermal limits and performance evolution of III nitride HEMTs. Here we analyse the high-temperature operation of III nitride HEMTs, examining the impact on material properties, device structure and circuit-level behaviour. We explore the role of critical device layers—including barrier and channel engineering, substrate selection and passivation strategies—in mitigating high-temperature-induced effects, and evaluate the thermal stability of III nitride HEMTs in logic, radiofrequency and power electronics applications. We also highlight key remaining challenges in the design and optimization of III nitride devices for high-temperature applications.