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<p>Monolithic three-dimensional integration technology can eliminate the need for mechanical alignment between driving circuits and light-emitting diode (LED) pixels, leading to ultrahigh-resolution displays. However, this is challenging for red micro-LEDs, which are typically based on AlGaInP/GaInP, because of their low quantum efficiency and performance degradation when the pixel size is reduced. Here we report a high-pixel-density (1,700 pixels per inch) red active-matrix display consisting of micro-LEDs based on an epitaxial AlInP/GaInP double-quantum-well structure and silicon complementary metal–oxide–semiconductor integrated circuits. The epitaxial layer exhibits high internal quantum efficiency at low current densities (less than 10 A cm<sup>−2</sup>) due to a hole-dominant quantum well that reduces the non-radiative Shockley–Read–Hall recombination caused by electron lateral diffusion. We also use thickness fluctuation scattering in the quantum well to minimize the size-dependent quantum efficiency shift to higher current densities when reducing the size of the red micro-LEDs.</p>

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A monolithic three-dimensional integrated red micro-LED display on silicon using AlInP/GaInP epilayers

  • 期刊论文

  • 发表日期：

    2026年1月20日

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  • Juhyuk Park,
  • Woojin Baek,
  • Hyunsu Kim,
  • Dongsoon Jung,
  • Hokwon Kim,
  • Baul Kim,
  • Yong-Hoon Cho,
  • Jaebong Lee,
  • SungWook Lim,
  • Shin Hyung Lee,
  • Seungyeop Ahn,
  • Seong Kwang Kim,
  • Jaeyong Jeong,
  • Joon Pyo Kim,
  • Jinha Lim,
  • Joonsup Shim,
  • Dae-Myeong Geum,
  • Sanghyeon Kim

摘要

Monolithic three-dimensional integration technology can eliminate the need for mechanical alignment between driving circuits and light-emitting diode (LED) pixels, leading to ultrahigh-resolution displays. However, this is challenging for red micro-LEDs, which are typically based on AlGaInP/GaInP, because of their low quantum efficiency and performance degradation when the pixel size is reduced. Here we report a high-pixel-density (1,700 pixels per inch) red active-matrix display consisting of micro-LEDs based on an epitaxial AlInP/GaInP double-quantum-well structure and silicon complementary metal–oxide–semiconductor integrated circuits. The epitaxial layer exhibits high internal quantum efficiency at low current densities (less than 10 A cm−2) due to a hole-dominant quantum well that reduces the non-radiative Shockley–Read–Hall recombination caused by electron lateral diffusion. We also use thickness fluctuation scattering in the quantum well to minimize the size-dependent quantum efficiency shift to higher current densities when reducing the size of the red micro-LEDs.