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<p>Modern communication and sensing technologies rely on complementary metal–oxide–semiconductor devices based on silicon. However, continuing to improve the capabilities of such systems through the miniaturization of transistors is increasingly challenging due to short channel effects and contact resistances. Here we report switches that are based on a zero-change silicon-on-insulator process and operate through the electrical control of displacement fields and tunnelling currents in the interface between polycrystalline and bulk silicon. The switches offer a cut-off frequency of 0.75 THz and a power handling that is ten times higher than conventional transistor-based switches that use the same silicon-on-insulator process. The technology achieves sub-30-ps hysteresis-free switching, and we illustrate its capabilities in millimetre-wave transmitters with data rates exceeding 10 Gbps.</p>

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High-power millimetre-wave switches on silicon using displacement fields and tunnelling currents

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • Mohammad Samizadeh Nikoo,
  • Mohamed Eleraky,
  • Basem Abdelaziz Abdelmagid,
  • Dongwoon Lee,
  • Farzan Jazaeri,
  • Adam Wang,
  • Boce Lin,
  • Hua Wang

摘要

Modern communication and sensing technologies rely on complementary metal–oxide–semiconductor devices based on silicon. However, continuing to improve the capabilities of such systems through the miniaturization of transistors is increasingly challenging due to short channel effects and contact resistances. Here we report switches that are based on a zero-change silicon-on-insulator process and operate through the electrical control of displacement fields and tunnelling currents in the interface between polycrystalline and bulk silicon. The switches offer a cut-off frequency of 0.75 THz and a power handling that is ten times higher than conventional transistor-based switches that use the same silicon-on-insulator process. The technology achieves sub-30-ps hysteresis-free switching, and we illustrate its capabilities in millimetre-wave transmitters with data rates exceeding 10 Gbps.