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<p>Two-dimensional (2D) semiconductors are promising building blocks for advanced electronic devices. However, the fabrication of high-quality 2D semiconductor wafers with engineered layers remains a challenge. Here we describe a direct wafer bonding and debonding method that can be applied to semiconductor monolayers that have been grown epitaxially on high-adhesion substrates such as sapphire. The process operates in both vacuum and a glovebox environment and requires no intermediate-layer assistance. It produces stacked 2D semiconductors with clean interfaces and wafer-scale uniformity and allows precise control of layer numbers and the interlayer twist angle. We use the approach to create different homostructures and heterostructures with 2D monolayers, including molybdenum disulfide (MoS<sub>2</sub>) and molybdenum diselenide (MoSe<sub>2</sub>). We also show that the approach can directly bond monolayer MoS<sub>2</sub> onto high-<i>κ</i> dielectric substrates (HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>) while preserving its intrinsic electronic properties.</p>

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Direct bonding and debonding of two-dimensional semiconductors

  • 期刊论文

  • 发表日期：

    2025年10月27日

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  • Jieying Liu,
  • Jiaojiao Zhao,
  • Tong Li,
  • Depeng Ji,
  • Liyan Dai,
  • Lu Li,
  • Zheng Wei,
  • JiaWei Li,
  • Qinqin Wang,
  • Hua Yu,
  • Lanying Zhou,
  • Yutong Chen,
  • Fanfan Wu,
  • Mingtong Zhu,
  • Huacong Sun,
  • Yun Li,
  • Songge Zhang,
  • Jinpeng Tian,
  • Xingchao Zhang,
  • Nianpeng Lu,
  • Xuedong Bai,
  • Zexian Cao,
  • Shenghuang Lin,
  • Shuopei Wang,
  • Dongxia Shi,
  • Na Li,
  • Luojun Du,
  • Wei Yang,
  • LeDe Xian,
  • Guangyu Zhang

摘要

Two-dimensional (2D) semiconductors are promising building blocks for advanced electronic devices. However, the fabrication of high-quality 2D semiconductor wafers with engineered layers remains a challenge. Here we describe a direct wafer bonding and debonding method that can be applied to semiconductor monolayers that have been grown epitaxially on high-adhesion substrates such as sapphire. The process operates in both vacuum and a glovebox environment and requires no intermediate-layer assistance. It produces stacked 2D semiconductors with clean interfaces and wafer-scale uniformity and allows precise control of layer numbers and the interlayer twist angle. We use the approach to create different homostructures and heterostructures with 2D monolayers, including molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2). We also show that the approach can directly bond monolayer MoS2 onto high-κ dielectric substrates (HfO2 and Al2O3) while preserving its intrinsic electronic properties.