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<p>Two-dimensional transition metal dichalcogenide semiconductors possess ideal attributes for meeting industry scaling targets for transistor channel technology. However, the development of scaled field-effect transistors (FETs) requires industry-compatible gate dielectrics with low equivalent oxide thicknesses. Here we show that zirconium oxide (ZrO<sub>2</sub>)—an industry-compatible high-dielectric-constant (<i>k</i>) oxide—can form a clean interface with two-dimensional molybdenum disulfide (MoS<sub>2</sub>). Photoelectron spectroscopy analysis shows that although silicon dioxide and hafnium oxide substrates introduce the doping of MoS<sub>2</sub>, ZrO<sub>2</sub> exhibits no measurable interactions with MoS<sub>2</sub>. Back-gated monolayer MoS<sub>2</sub> FETs using ZrO<sub>2</sub> as a dielectric exhibit stable and positive threshold voltages of 0.36 V, subthreshold swings of 75 mV dec<sup>−1</sup> and ON currents of more than 400 µA. We also use ZrO<sub>2</sub> dielectrics to fabricate p-type tungsten diselenide FETs with ON-state currents of more than 200 µA µm<sup>−1</sup>. Atomic-resolution imaging of ZrO<sub>2</sub> deposited on top of MoS<sub>2</sub> reveals a defect-free interface, which leads to top-gated FETs with an equivalent oxide thickness of 0.86 nm and subthreshold swing values of 80 mV dec<sup>−1</sup>. The clean interface between ZrO<sub>2</sub> and monolayer MoS<sub>2</sub> allows the effective modulation of threshold voltage in top-gated FETs via gate metal work-function engineering.</p>

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A clean van der Waals interface between the high-k dielectric zirconium oxide and two-dimensional molybdenum disulfide

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月6日

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  • Han Yan,
  • Yan Wang,
  • Yang Li,
  • Dibya Phuyal,
  • Lixin Liu,
  • Hailing Guo,
  • Yuzheng Guo,
  • Tien-Lin Lee,
  • Minhyuk Kim,
  • Hu Young Jeong,
  • Manish Chhowalla

摘要

Two-dimensional transition metal dichalcogenide semiconductors possess ideal attributes for meeting industry scaling targets for transistor channel technology. However, the development of scaled field-effect transistors (FETs) requires industry-compatible gate dielectrics with low equivalent oxide thicknesses. Here we show that zirconium oxide (ZrO2)—an industry-compatible high-dielectric-constant (k) oxide—can form a clean interface with two-dimensional molybdenum disulfide (MoS2). Photoelectron spectroscopy analysis shows that although silicon dioxide and hafnium oxide substrates introduce the doping of MoS2, ZrO2 exhibits no measurable interactions with MoS2. Back-gated monolayer MoS2 FETs using ZrO2 as a dielectric exhibit stable and positive threshold voltages of 0.36 V, subthreshold swings of 75 mV dec−1 and ON currents of more than 400 µA. We also use ZrO2 dielectrics to fabricate p-type tungsten diselenide FETs with ON-state currents of more than 200 µA µm−1. Atomic-resolution imaging of ZrO2 deposited on top of MoS2 reveals a defect-free interface, which leads to top-gated FETs with an equivalent oxide thickness of 0.86 nm and subthreshold swing values of 80 mV dec−1. The clean interface between ZrO2 and monolayer MoS2 allows the effective modulation of threshold voltage in top-gated FETs via gate metal work-function engineering.