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<p>Tin halide perovskites are a potential p-type channel material for thin-film transistors due to their high room-temperature hole mobility and easy processability. However, creating a high-quality thin film with a three-dimensional tin halide perovskite is challenging due to its inherent instability and defect density. Here we show that the coordinated control of A-site cations and X-site anions in a three-dimensional perovskite, formamidinium tin iodide (FASnI<sub>3</sub>), using methylammonium chloride (MACl) can stabilize the crystal structure. Unlike lead halide perovskites, where MACl functions only as a volatile intermediate-phase stabilizer, we show that MACl is incorporated into the FASnI<sub>3</sub> crystal structure through the substitution of FA and I components with MA and Cl, which enhances its stability. The resulting uniform thin films offer improved crystallinity and larger grain sizes. A MACl-substituted FASnI<sub>3</sub> transistor exhibits a field-effect hole mobility of over 80 cm<sup>2</sup> V<sup>−</sup><sup>1</sup> s<sup>−1</sup>, an on/off current ratio over 3.0 × 10<sup>9</sup> and a threshold voltage of around 0 V, as well as high operational reliability and hysteresis-free behaviour.</p>

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Non-volatile methylammonium chloride substitution for tin halide perovskite transistors

  • 期刊论文

  • 发表日期：

    2025年10月17日

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  • Hansol Park,
  • Cheong Beom Lee,
  • Jongmin Lee,
  • Seon-Jeong Lim,
  • Bum Ho Jeong,
  • Hakjun Kim,
  • Seong Jae Lee,
  • Hayoung Oh,
  • Hyungju Ahn,
  • Do Hwan Kim,
  • Kyeounghak Kim,
  • Hui Joon Park

摘要

Tin halide perovskites are a potential p-type channel material for thin-film transistors due to their high room-temperature hole mobility and easy processability. However, creating a high-quality thin film with a three-dimensional tin halide perovskite is challenging due to its inherent instability and defect density. Here we show that the coordinated control of A-site cations and X-site anions in a three-dimensional perovskite, formamidinium tin iodide (FASnI3), using methylammonium chloride (MACl) can stabilize the crystal structure. Unlike lead halide perovskites, where MACl functions only as a volatile intermediate-phase stabilizer, we show that MACl is incorporated into the FASnI3 crystal structure through the substitution of FA and I components with MA and Cl, which enhances its stability. The resulting uniform thin films offer improved crystallinity and larger grain sizes. A MACl-substituted FASnI3 transistor exhibits a field-effect hole mobility of over 80 cm2 V−1 s−1, an on/off current ratio over 3.0 × 109 and a threshold voltage of around 0 V, as well as high operational reliability and hysteresis-free behaviour.