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<p>High-performance and low-power thin-film transistor technology is needed for the development of wearable electronics and the Internet of Things. However, the thermionic limit of the subthreshold swing sets an upper bound on the performance of such systems. Here we report a subthermionic organic thin-film tunnel transistor based on interfacial molecule decoupling. In these devices, minimized gap states at the interface between the metal oxide layer and the organic semiconductor lead to quantum band-to-band tunnelling injection at a small supply voltage. Our thin-film transistors exhibit a subthreshold swing of 24.2 ± 5.6 mV dec<sup>−1</sup> and a signal amplification efficiency of 101.2 ± 28.3 S A<sup>−1</sup>. The average subthreshold swing is below 60 mV dec<sup>−1</sup> for over four decades of current. We use the transistors to build amplification circuits that offer a gain of over 537 V V<sup>−1</sup> at a low power of less than 0.8 nW, and create sensor interfaces that can measure electrophysiological signals with a high signal-to-noise ratio.</p>

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Organic thin-film tunnel transistors

  • 期刊论文

  • 发表日期：

    2025年9月29日

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  • Wei Deng,
  • Xiujuan Zhang,
  • Zhenjun Lu,
  • Yujian Zhang,
  • Fengquan Qiu,
  • Yongji Wang,
  • Haoyu Jiang,
  • Xiaobin Ren,
  • Yiming Wu,
  • Xian-Kai Chen,
  • Henning Sirringhaus,
  • Jiansheng Jie,
  • Xiaohong Zhang

摘要

High-performance and low-power thin-film transistor technology is needed for the development of wearable electronics and the Internet of Things. However, the thermionic limit of the subthreshold swing sets an upper bound on the performance of such systems. Here we report a subthermionic organic thin-film tunnel transistor based on interfacial molecule decoupling. In these devices, minimized gap states at the interface between the metal oxide layer and the organic semiconductor lead to quantum band-to-band tunnelling injection at a small supply voltage. Our thin-film transistors exhibit a subthreshold swing of 24.2 ± 5.6 mV dec−1 and a signal amplification efficiency of 101.2 ± 28.3 S A−1. The average subthreshold swing is below 60 mV dec−1 for over four decades of current. We use the transistors to build amplification circuits that offer a gain of over 537 V V−1 at a low power of less than 0.8 nW, and create sensor interfaces that can measure electrophysiological signals with a high signal-to-noise ratio.