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<p>Magnetization switching driven by spin–orbit torque could be used to create an energy-efficient form of magnetic random-access memory. Tungsten is a promising heavy metal for such applications and can generate large spin–orbit torques when stabilized in its β-phase. However, the α-phase, which has a lower spin-Hall angle, is more thermodynamically stable. It is thus challenging to integrate metastable β-tungsten into complementary metal–oxide–semiconductor processes while maintaining phase stability under the back-end-of-line thermal constraints (400 °C for extended durations). Here we show that the insertion of thin layers of cobalt can be used to stabilize β-tungsten under back-end-of-line-compatible thermal conditions. Our composite β-tungsten layers can maintain their phase up to 400 °C for 10 h and can withstand 700 °C for 30 min. The film stacks exhibit a spin-Hall conductivity of around 4,500 Ω<sup>−1</sup> cm<sup>−1</sup>, which we measure by means of spin-torque ferromagnetic resonance and harmonic Hall resistance measurements. Using the tungsten composite film stacks, we fabricate a 64-kb spin–orbit torque magnetic random-access memory that offers a spin–orbit torque switching of 1 ns, data retention of more than 10 years and a tunnelling magnetoresistance of 146%.</p>

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A 64-kilobit spin–orbit torque magnetic random-access memory based on back-end-of-line-compatible β-tungsten

  • 期刊论文

  • 发表日期：

    2025年9月2日

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  • Yen-Lin Huang,
  • MingYuan Song,
  • Chien-Min Lee,
  • Yu-Wei Chen,
  • Ching-Yu Chiang,
  • Shih-Hsiang Chou,
  • Liang-Chao Hsu,
  • Heng-Jui Liu,
  • Guan-Long Chen,
  • Shan-Yi Yang,
  • Yao-Jen Chang,
  • I-Jung Wang,
  • Yu-Chen Hsin,
  • Yi-Hui Su,
  • Jeng-Hua Wei,
  • Fen Xue,
  • Shan X. Wang,
  • Xinyu Bao

摘要

Magnetization switching driven by spin–orbit torque could be used to create an energy-efficient form of magnetic random-access memory. Tungsten is a promising heavy metal for such applications and can generate large spin–orbit torques when stabilized in its β-phase. However, the α-phase, which has a lower spin-Hall angle, is more thermodynamically stable. It is thus challenging to integrate metastable β-tungsten into complementary metal–oxide–semiconductor processes while maintaining phase stability under the back-end-of-line thermal constraints (400 °C for extended durations). Here we show that the insertion of thin layers of cobalt can be used to stabilize β-tungsten under back-end-of-line-compatible thermal conditions. Our composite β-tungsten layers can maintain their phase up to 400 °C for 10 h and can withstand 700 °C for 30 min. The film stacks exhibit a spin-Hall conductivity of around 4,500 Ω−1 cm−1, which we measure by means of spin-torque ferromagnetic resonance and harmonic Hall resistance measurements. Using the tungsten composite film stacks, we fabricate a 64-kb spin–orbit torque magnetic random-access memory that offers a spin–orbit torque switching of 1 ns, data retention of more than 10 years and a tunnelling magnetoresistance of 146%.