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<p>Two-dimensional (2D) materials could be used to build next-generation electronics. However, despite progress in the synthesis of single-crystal 2D wafers for use as the channel material in devices, the preparation of single-crystal dielectric wafers—and their reliable integrating on 2D semiconductors with clean interfaces, large gate capacitance and low leakage current—remains challenging. Here we show that thin (around 2 nm) single-crystal wafers of the dielectric antimony oxide (Sb<sub>2</sub>O<sub>3</sub>) can be epitaxially grown on a graphene-covered copper surface. The films exhibit good gate controllability at an equivalent oxide thickness of 0.6 nm. The conformal growth of Sb<sub>2</sub>O<sub>3</sub> allows graphene to be transferred onto application-specific substrates with a low density of cracks and wrinkles. With the approach, and due to the clean dielectric interface, graphene devices can be fabricated on a four-inch wafer that exhibit a maximum carrier mobility of 29,000 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> (average of 14,000 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>) and good long-term stability. The Sb<sub>2</sub>O<sub>3</sub> can also be transferred and used as a dielectric in molybdenum disulfide (MoS<sub>2</sub>) devices, leading to devices with an on/off ratio of 10<sup>8</sup> and minimum subthreshold swing of 64 mV dec<sup>−1</sup>.</p>

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Dielectric-assisted transfer using single-crystal antimony oxide for two-dimensional material devices

  • 期刊论文

  • 发表日期：

    2025年3月20日

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  • Junhao Liao,
  • Yixuan Zhao,
  • Xiaohui Chen,
  • Zhaoning Hu,
  • Saiyu Bu,
  • Yaqi Zhu,
  • Qi Lu,
  • Mingpeng Shang,
  • Haotian Wu,
  • Fangfang Li,
  • Zhuofeng Shi,
  • Qian Zhao,
  • Kaicheng Jia,
  • Jingyi Hu,
  • Ziyi Han,
  • Qin Xie,
  • Xiaoxu Zhao,
  • Jianbo Yin,
  • Wendong Wang,
  • Hailin Peng,
  • Xiaohui Qiu,
  • Yanfeng Zhang,
  • Li Lin,
  • Zhongfan Liu

摘要

Two-dimensional (2D) materials could be used to build next-generation electronics. However, despite progress in the synthesis of single-crystal 2D wafers for use as the channel material in devices, the preparation of single-crystal dielectric wafers—and their reliable integrating on 2D semiconductors with clean interfaces, large gate capacitance and low leakage current—remains challenging. Here we show that thin (around 2 nm) single-crystal wafers of the dielectric antimony oxide (Sb2O3) can be epitaxially grown on a graphene-covered copper surface. The films exhibit good gate controllability at an equivalent oxide thickness of 0.6 nm. The conformal growth of Sb2O3 allows graphene to be transferred onto application-specific substrates with a low density of cracks and wrinkles. With the approach, and due to the clean dielectric interface, graphene devices can be fabricated on a four-inch wafer that exhibit a maximum carrier mobility of 29,000 cm2 V−1 s−1 (average of 14,000 cm2 V−1 s−1) and good long-term stability. The Sb2O3 can also be transferred and used as a dielectric in molybdenum disulfide (MoS2) devices, leading to devices with an on/off ratio of 108 and minimum subthreshold swing of 64 mV dec−1.