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An antiferromagnetic diode effect in even-layered MnBi2Te4

  • 期刊论文

  • 发表日期：

    2024年8月12日

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  • Anyuan Gao,
  • Shao-Wen Chen,
  • Barun Ghosh,
  • Jian-Xiang Qiu,
  • Yu-Fei Liu,
  • Yugo Onishi,
  • Chaowei Hu,
  • Tiema Qian,
  • Damien Bérubé,
  • Thao Dinh,
  • Houchen Li,
  • Christian Tzschaschel,
  • Seunghyun Park,
  • Tianye Huang,
  • Shang-Wei Lien,
  • Zhe Sun,
  • Sheng-Chin Ho,
  • Bahadur Singh,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • David C. Bell,
  • Arun Bansil,
  • Hsin Lin,
  • Tay-Rong Chang,
  • Amir Yacoby,
  • Ni Ni,
  • Liang Fu,
  • Qiong Ma,
  • Su-Yang Xu

摘要

In a p–n junction, the separation of positive and negative charges leads to diode transport, in which charge flows in only one direction. Non-centrosymmetric polar conductors are intrinsic diodes that could be of use in the development of nonlinear applications. Such systems have recently been extended to non-centrosymmetric superconductors, and the superconducting diode effect has been observed. Here, we report an antiferromagnetic diode effect in a centrosymmetric crystal without directional charge separation. We observed large second-harmonic transport in a nonlinear electronic device enabled by the compensated antiferromagnetic state of even-layered MnBi2Te4. We show that this antiferromagnetic diode effect can be used to create in-plane field-effect transistors and microwave-energy-harvesting devices. We also show that electrical sum-frequency generation can be used as a tool to detect nonlinear responses in quantum materials.