A scalable ferroelectric non-volatile memory operating at 600 °C
摘要
Non-volatile memory devices that can operate reliably at high temperature are required for the development of extreme environment electronics. However, creating such devices remains challenging. Here we report a non-volatile memory device that is based on an aluminium scandium nitride (Al0.68Sc0.32N) ferroelectric diode and can operate at temperatures of up to 600 °C. The devices are composed of metal–insulator–metal structures of nickel/AlScN/platinum grown on 4-inch silicon wafers. They exhibit clear ferroelectric switching up to 600 °C with distinct on and off states. At 600 °C, the devices exhibit one million read cycles and readable on–off ratios above 1 for over 60 h. The operating voltages of the AlScN ferrodiodes are less than 15 V at 600 °C and are thus compatible with silicon-carbide-based high-temperature logic technology.