Scholarlink

<p>2D semiconductors such as MoS<sub>2</sub> offer a promising pathway for future logic and analog transistors and memories. These materials feature scalable channel size, back-end of the line compatibility, and high mobility for relatively small channel thickness approaching few atomic monolayers. An open issue for the development of mature 2D-based digital technology is the availability of both n- and p-type transistors, as well as the ability to control the transistor type in a reconfigurable way. This work presents a novel MoS<sub>2</sub>-based transistor exhibiting reconfigurable n- or p-type characteristics, namely switching from n-type to p-type and vice versa, which is attributed to ion-assisted doping from the gate dielectric layer. Extensive characterization of the device shows repeatable switching with relatively low cycle-to-cycle (C2C) and device-to-device (D2D) variability. A reconfigurable p-n junction is demonstrated via a junction-less multi-gate MoS<sub>2</sub>-based transistor. We also demonstrate various reconfigurable logic gates, including a complementary metal-oxide-semiconductor (CMOS) inverter, a fully n-type inverter and an XNOR logic gate based on MoS<sub>2</sub> transistors, showcasing the generality and flexibility of channel reconfiguration for logic circuit applications. These results underscore the strong potential of reconfigurable MoS<sub>2</sub> transistors for ultra-scaled, reconfigurable logic circuits.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Voltage-controlled reconfigurable characteristics in MoS2 transistors via ion migration for reprogrammable logic

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月3日

查看全文
  • Matteo Farronato,
  • Fabio Carletti,
  • Niccolò Garegnani,
  • Anupam Jana,
  • Matteo Porzani,
  • Saverio Ricci,
  • Augusta Ungarelli,
  • Christian Monzio Compagnoni,
  • Paolo Fantini,
  • Innocenzo Tortorelli,
  • Agostino Pirovano,
  • Christian Rinaldi,
  • Daniele Ielmini

摘要

2D semiconductors such as MoS2 offer a promising pathway for future logic and analog transistors and memories. These materials feature scalable channel size, back-end of the line compatibility, and high mobility for relatively small channel thickness approaching few atomic monolayers. An open issue for the development of mature 2D-based digital technology is the availability of both n- and p-type transistors, as well as the ability to control the transistor type in a reconfigurable way. This work presents a novel MoS2-based transistor exhibiting reconfigurable n- or p-type characteristics, namely switching from n-type to p-type and vice versa, which is attributed to ion-assisted doping from the gate dielectric layer. Extensive characterization of the device shows repeatable switching with relatively low cycle-to-cycle (C2C) and device-to-device (D2D) variability. A reconfigurable p-n junction is demonstrated via a junction-less multi-gate MoS2-based transistor. We also demonstrate various reconfigurable logic gates, including a complementary metal-oxide-semiconductor (CMOS) inverter, a fully n-type inverter and an XNOR logic gate based on MoS2 transistors, showcasing the generality and flexibility of channel reconfiguration for logic circuit applications. These results underscore the strong potential of reconfigurable MoS2 transistors for ultra-scaled, reconfigurable logic circuits.