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<p>Two-dimensional materials (2DMs) hold significant potential for future electronics, as demonstrated by high-performing devices for sensing, optics, and electronics. However, scalable growth techniques such as metal-organic chemical vapor deposition (MOCVD) typically require high temperatures, which limit their integration with conventional semiconductor processes. Therefore, reliable transfer processes from crystalline, low-contamination growth substrates such as sapphire are essential. Existing methods using chemicals such as potassium hydroxide (KOH) have potential quality issues and require manual handling and enhanced safety precautions. Here, we introduce a deionized water-based, frame-assisted, large-scale transfer method for two widely used two-dimensional materials, molybdenum disulfide (MoS<sub>2</sub>) and hexagonal boron nitride (h-BN). We demonstrate the scalability of our process with the transfer of MoS<sub>2</sub> from a 100 mm diameter sapphire wafer. The material quality was verified as-grown and after transfer via atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. The data show less compressive strain levels and insignificant changes in the doping or contamination of 2DMs after transfer.</p>

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Water-based, large-scale transfer of 2D materials grown on sapphire substrates

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年4月20日

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  • Nico Rademacher,
  • Lukas Völkel,
  • Eros Reato,
  • Martin Otto,
  • Simonas Krotkus,
  • Jan Mischke,
  • Emre Yengel,
  • Christof Mauder,
  • Alex Henning,
  • Michael Heuken,
  • Ke Ran,
  • Joachim Mayer,
  • Max C. Lemme

摘要

Two-dimensional materials (2DMs) hold significant potential for future electronics, as demonstrated by high-performing devices for sensing, optics, and electronics. However, scalable growth techniques such as metal-organic chemical vapor deposition (MOCVD) typically require high temperatures, which limit their integration with conventional semiconductor processes. Therefore, reliable transfer processes from crystalline, low-contamination growth substrates such as sapphire are essential. Existing methods using chemicals such as potassium hydroxide (KOH) have potential quality issues and require manual handling and enhanced safety precautions. Here, we introduce a deionized water-based, frame-assisted, large-scale transfer method for two widely used two-dimensional materials, molybdenum disulfide (MoS2) and hexagonal boron nitride (h-BN). We demonstrate the scalability of our process with the transfer of MoS2 from a 100 mm diameter sapphire wafer. The material quality was verified as-grown and after transfer via atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. The data show less compressive strain levels and insignificant changes in the doping or contamination of 2DMs after transfer.