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<p>Atomically thin hexagonal boron nitride (hBN) interlayers control interactions between electronic states of interfacing materials by modulating their separation at the atomic scale. These interlayers regulate interactions, whose strengths vary with distance. Here, we review how hBN is employed to enhance electronic and optoelectronic performance by mitigating disadvantageous interactions while preserving advantageous ones. Recent advances in hBN growth and integration are highlighted, and challenges that hinder widespread application are discussed.</p>

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Hexagonal boron nitride: interlayer with atomic scale precision for interface engineering in functional materials and devices

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月17日

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  • Ju-Hyun Jung,
  • Cheol-Joo Kim

摘要

Atomically thin hexagonal boron nitride (hBN) interlayers control interactions between electronic states of interfacing materials by modulating their separation at the atomic scale. These interlayers regulate interactions, whose strengths vary with distance. Here, we review how hBN is employed to enhance electronic and optoelectronic performance by mitigating disadvantageous interactions while preserving advantageous ones. Recent advances in hBN growth and integration are highlighted, and challenges that hinder widespread application are discussed.