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<p>Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However, in some rare instances, ET can happen from the <i>lower-to-higher</i> bandgap material, depending on the strong overlap between the acceptor photoluminescence (PL) and the donor absorption spectra. In this work, we report an ET process from the <i>lower bandgap</i> MoS<sub>2</sub> to the <i>higher bandgap</i> WS<sub>2</sub>, due to a near ‘resonant’ overlap between the MoS<sub>2</sub> B and WS<sub>2</sub> A excitonic levels. Changing the MoS<sub>2</sub> bandgap from direct-to-indirect by increasing the layer number results in a reduced ET rate, evidenced by the quenching of the WS<sub>2</sub> PL emission. Our work shows at 300 K, the ET timescale of ~33 fs is faster than the reported thermalization of the MoS<sub>2</sub> excitonic intervalley scattering (K ↔ K’) time and competing with the ultrafast charge transfer timescale. Thus, allowing us to open a new direction in understanding the competing inter/intralayer processes.</p>

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Fast interlayer energy transfer from the lower bandgap MoS2 to the higher bandgap WS2

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月17日

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  • Gayatri,
  • Mehdi Arfaoui,
  • Debashish Das,
  • Tomasz Kazimierczuk,
  • Sabrine Ayari,
  • Natalia Zawadzka,
  • Takashi Taniguchi,
  • Kenji Watanabe,
  • Adam Babiński,
  • Saroj K. Nayak,
  • Maciej R. Molas,
  • Arka Karmakar

摘要

Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However, in some rare instances, ET can happen from the lower-to-higher bandgap material, depending on the strong overlap between the acceptor photoluminescence (PL) and the donor absorption spectra. In this work, we report an ET process from the lower bandgap MoS2 to the higher bandgap WS2, due to a near ‘resonant’ overlap between the MoS2 B and WS2 A excitonic levels. Changing the MoS2 bandgap from direct-to-indirect by increasing the layer number results in a reduced ET rate, evidenced by the quenching of the WS2 PL emission. Our work shows at 300 K, the ET timescale of ~33 fs is faster than the reported thermalization of the MoS2 excitonic intervalley scattering (K ↔ K’) time and competing with the ultrafast charge transfer timescale. Thus, allowing us to open a new direction in understanding the competing inter/intralayer processes.