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<p>The Rashba effect, originating from spin-orbit interaction and crystal asymmetry, enables electric-field control of electron spins, making materials with strong Rashba splitting near the Fermi level attractive for spintronics. Using first-principles calculations, we identify asymmetric Bi<sub>2</sub>O<sub>2</sub>Se monolayer as a semiconductor exhibiting large Rashba splitting. Its structure induces a work function difference (Δ<i>ϕ</i>) of 3.25 eV, dipole moment of 0.32 D, and a small band gap of 0.30 eV. The conduction band shows Rashba energy <i>E</i><sub><i>R</i></sub> = 33.6 meV and coupling constant <i>α</i><sub><i>R</i></sub> = 10.56 eV Å with circular spin texture around the <i>Γ</i> point. The monolayer remains mechanically stable under ± 10% strain, while strain and electric fields (≤0.3 V/Å) reversibly tune polarization and Rashba splitting. A finite out-of-plane spin component (<i>S</i><sub><i>z</i></sub>) emerges from anisotropic SOC, demonstrating experimentally feasible and controllable spin-texture modulation. Both <i>E</i><sub><i>R</i></sub> and <i>α</i><sub><i>R</i></sub> increase under tensile strain, highlighting Bi<sub>2</sub>O<sub>2</sub>Se’s potential for high-efficiency spin-field-effect transistors and advanced semiconductor spintronics.</p><p></p>

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Tuning Rashba spin textures in asymmetric Bi2O2Se monolayer for spintronic applications

  • 期刊论文

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  • 发表日期：

    2026年1月6日

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  • Deobrat Singh,
  • Yogesh Sonvane,
  • Raquel Lizárraga

摘要

The Rashba effect, originating from spin-orbit interaction and crystal asymmetry, enables electric-field control of electron spins, making materials with strong Rashba splitting near the Fermi level attractive for spintronics. Using first-principles calculations, we identify asymmetric Bi2O2Se monolayer as a semiconductor exhibiting large Rashba splitting. Its structure induces a work function difference (Δϕ) of 3.25 eV, dipole moment of 0.32 D, and a small band gap of 0.30 eV. The conduction band shows Rashba energy ER = 33.6 meV and coupling constant αR = 10.56 eV Å with circular spin texture around the Γ point. The monolayer remains mechanically stable under ± 10% strain, while strain and electric fields (≤0.3 V/Å) reversibly tune polarization and Rashba splitting. A finite out-of-plane spin component (Sz) emerges from anisotropic SOC, demonstrating experimentally feasible and controllable spin-texture modulation. Both ER and αR increase under tensile strain, highlighting Bi2O2Se’s potential for high-efficiency spin-field-effect transistors and advanced semiconductor spintronics.