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<p>Two-dimensional materials such as gallium selenide (GaSe) hold promise for optoelectronics due to their tunable bandgaps. Gallium sesquiselenide (Ga<sub>2</sub>Se<sub>3</sub>), a related phase with a direct bandgap, is also suitable for integration on silicon due to its matching lattice constant. We demonstrate wafer-scale synthesis of Ga<sub>x</sub>Se<sub><i>y</i></sub> by metal-organic chemical vapor deposition, varying growth temperature (450–600 °C) and selenium-to-gallium ratio. To guide phase-pure growth, we construct a phase diagram. Raman spectroscopy confirms phase formation, while mass spectrometry of Di-iso-propyl selenide supports the temperature-dependent phase transition, induced by the actual selenium-to-gallium ratio on the wafer surface. Microscopy reveals distinct morphologies: Ga<sub>2</sub>Se<sub>3</sub> forms epitaxial films with antiphase domains on GaP/Si, while GaSe grows as faceted 〈111〉 -oriented sheets. Optical spectroscopy confirms direct transitions at 1.34 eV (Ga<sub>2</sub>Se<sub>3</sub>) and 1.89 eV (GaSe). These results demonstrate controlled MOCVD growth of phase-pure Ga<sub><i>x</i></sub>Se<sub><i>y</i></sub> and highlight their potential for silicon-based optoelectronic integration.</p>

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MOCVD growth of covalent and 2D GaxSey: a phase validation and characterization

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月28日

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  • Nils Fritjof Langlotz,
  • Robin Günkel,
  • Dominik Muth,
  • Imad Limame,
  • Naghmeh Ghadghooni,
  • Max Bergmann,
  • Marcel Kröner,
  • Jürgen Belz,
  • Andreas Beyer,
  • Stephan Reitzenstein,
  • Marina Gerhard,
  • Kerstin Volz

摘要

Two-dimensional materials such as gallium selenide (GaSe) hold promise for optoelectronics due to their tunable bandgaps. Gallium sesquiselenide (Ga2Se3), a related phase with a direct bandgap, is also suitable for integration on silicon due to its matching lattice constant. We demonstrate wafer-scale synthesis of GaxSey by metal-organic chemical vapor deposition, varying growth temperature (450–600 °C) and selenium-to-gallium ratio. To guide phase-pure growth, we construct a phase diagram. Raman spectroscopy confirms phase formation, while mass spectrometry of Di-iso-propyl selenide supports the temperature-dependent phase transition, induced by the actual selenium-to-gallium ratio on the wafer surface. Microscopy reveals distinct morphologies: Ga2Se3 forms epitaxial films with antiphase domains on GaP/Si, while GaSe grows as faceted 〈111〉 -oriented sheets. Optical spectroscopy confirms direct transitions at 1.34 eV (Ga2Se3) and 1.89 eV (GaSe). These results demonstrate controlled MOCVD growth of phase-pure GaxSey and highlight their potential for silicon-based optoelectronic integration.