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<p>This study explores the challenges associated with translating electrical characteristics of individual two-dimensional semiconductor nanosheets into a network of partially overlapping sheets. Such systems typically suffer from high-energy barriers required to overcome the junctions formed between the adjacent nanosheets, and consequently quench the current passing through the network. We use <i>in-operando</i> Kelvin probe force microscopy to image electrostatic potential profiles during the operation of MoS<sub>2</sub> nanosheet network transistors. Direct imaging of the potential drops allows us to distinguish contributions from individual nanosheets and those from junctions, correlated by the junction-related potential drops with the network morphology. A diagram-based model is developed to describe the system numerically and to estimate the current path formation probabilities. Finally, a correlation with the integral electrical characteristics of the nanosheet-based transistors is made using a robust Y-function approach. It is shown that the total junction resistance is well estimated by the proposed equivalent circiut model.</p>

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Imaging junctions in two-dimensional semiconductor nanosheet networks

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年10月31日

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  • Jelena Pešić,
  • Simon Leitner,
  • Joseph Neilson,
  • Igor Stanković,
  • Muhammad Zubair Khan,
  • Dragana Tizić Matković,
  • Adam G. Kelly,
  • Tian Carey,
  • Jonathan Coleman,
  • Aleksandar Matković

摘要

This study explores the challenges associated with translating electrical characteristics of individual two-dimensional semiconductor nanosheets into a network of partially overlapping sheets. Such systems typically suffer from high-energy barriers required to overcome the junctions formed between the adjacent nanosheets, and consequently quench the current passing through the network. We use in-operando Kelvin probe force microscopy to image electrostatic potential profiles during the operation of MoS2 nanosheet network transistors. Direct imaging of the potential drops allows us to distinguish contributions from individual nanosheets and those from junctions, correlated by the junction-related potential drops with the network morphology. A diagram-based model is developed to describe the system numerically and to estimate the current path formation probabilities. Finally, a correlation with the integral electrical characteristics of the nanosheet-based transistors is made using a robust Y-function approach. It is shown that the total junction resistance is well estimated by the proposed equivalent circiut model.