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<p>In modern data-intensive applications, the segmentation of memory and processors leads to reduced throughput, lower energy efficiency, and increased latency. Functional memory systems address this by enabling operations beyond basic read-write tasks within memory arrays, as in in-memory computing (IMC). Non-volatile memories further enhance efficiency by storing data without static power loss. Of particular interest are 2D ferroelectric tunnel junctions (FTJs), such as those based on MoS<sub>2</sub>, due to their compact size, high ON–OFF ratios, and CMOS compatibility. In this work, we propose a novel memory design using MoS<sub>2</sub>-based FTJs that reliably store data via ferroelectric polarization and support multiple in-memory functions. These include Boolean logic, batch reads, variation-robust self-referencing reads, and reconfigurable content-addressable memory functionality through peripheral circuit changes. We validate these polymorphic behaviors through measured characteristics of fabricated 2D MoS<sub>2</sub>-FTJs and simulations using the GlobalFoundries’ 22 nm silicon-on-insulator technology node.</p>

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Multi-functional polymorphic memory based on 2D ferroelectric tunnel junctions

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月30日

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  • Md Abdullah-Al Kaiser,
  • Kayode Oluwaseyi Adebunmi,
  • Haolin You,
  • Chen Shao,
  • Yulu Mao,
  • Ying Wang,
  • Akhilesh Jaiswal

摘要

In modern data-intensive applications, the segmentation of memory and processors leads to reduced throughput, lower energy efficiency, and increased latency. Functional memory systems address this by enabling operations beyond basic read-write tasks within memory arrays, as in in-memory computing (IMC). Non-volatile memories further enhance efficiency by storing data without static power loss. Of particular interest are 2D ferroelectric tunnel junctions (FTJs), such as those based on MoS2, due to their compact size, high ON–OFF ratios, and CMOS compatibility. In this work, we propose a novel memory design using MoS2-based FTJs that reliably store data via ferroelectric polarization and support multiple in-memory functions. These include Boolean logic, batch reads, variation-robust self-referencing reads, and reconfigurable content-addressable memory functionality through peripheral circuit changes. We validate these polymorphic behaviors through measured characteristics of fabricated 2D MoS2-FTJs and simulations using the GlobalFoundries’ 22 nm silicon-on-insulator technology node.