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<p>Antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) thin-film solar cells have attracted considerable attention due to their earth-abundant composition, suitable bandgap, and high absorption coefficient. However, their performance remains limited by carrier recombination, interfacial losses, and incomplete spectral utilization. In this work, a CuGaSe<sub>2</sub>-assisted dual-absorber architecture is proposed and investigated using SCAPS-1D simulation to enhance the optoelectronic performance of Sb<sub>2</sub>Se<sub>3</sub>-based solar cells. The reference structure (Mo/MoSe<sub>2</sub>/Sb<sub>2</sub>Se<sub>3</sub>/CdS/ZnO/Al:ZnO) is first calibrated against experimental data, showing excellent agreement in key photovoltaic parameters. A <InlineEquation ID="IEq1"><EquationSource Format="TEX">\({\text{CuGaSe}}_{2}\)</EquationSource></InlineEquation> layer is then introduced between Sb<sub>2</sub>Se<sub>3</sub> and CdS, forming a Mo/MoSe<sub>2</sub>/Sb<sub>2</sub>Se<sub>3</sub>/CdS/ZnO/Al:ZnO heterostructure. The proposed device exhibits a significant improvement in performance, with power conversion efficiency increasing from 10.12 to 19.50%, accompanied by an increase in open-circuit voltage from 0.48 to 0.77&#xa0;V and short-circuit current density from 30.87 to 35.80&#xa0;mA cm<sup>−2</sup>. This enhancement is attributed to improved optical utilization, enhanced carrier generation, and suppressed recombination losses associated with favorable band alignment and modified interfacial energetics introduced by the CuGaSe<sub>2</sub> layer. Additional analyses reveal an increase in built-in potential and a reduction in recombination activity compared with the reference device. Overall, these results demonstrate that CuGaSe<sub>2</sub> can play a beneficial dual role as both an auxiliary absorber and an interfacial energy-modulating layer in Sb<sub>2</sub>Se<sub>3</sub>-based thin-film solar cells.</p>

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Enhancing Sb2Se3 thin-film solar cell efficiency via CuGaSe2 dual-absorber integration

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月29日

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  • Danial Keighobadi,
  • Mehdi Mousavi-Kamazani,
  • Mohammad Danaie

摘要

Antimony selenide (Sb2Se3) thin-film solar cells have attracted considerable attention due to their earth-abundant composition, suitable bandgap, and high absorption coefficient. However, their performance remains limited by carrier recombination, interfacial losses, and incomplete spectral utilization. In this work, a CuGaSe2-assisted dual-absorber architecture is proposed and investigated using SCAPS-1D simulation to enhance the optoelectronic performance of Sb2Se3-based solar cells. The reference structure (Mo/MoSe2/Sb2Se3/CdS/ZnO/Al:ZnO) is first calibrated against experimental data, showing excellent agreement in key photovoltaic parameters. A \({\text{CuGaSe}}_{2}\) layer is then introduced between Sb2Se3 and CdS, forming a Mo/MoSe2/Sb2Se3/CdS/ZnO/Al:ZnO heterostructure. The proposed device exhibits a significant improvement in performance, with power conversion efficiency increasing from 10.12 to 19.50%, accompanied by an increase in open-circuit voltage from 0.48 to 0.77 V and short-circuit current density from 30.87 to 35.80 mA cm−2. This enhancement is attributed to improved optical utilization, enhanced carrier generation, and suppressed recombination losses associated with favorable band alignment and modified interfacial energetics introduced by the CuGaSe2 layer. Additional analyses reveal an increase in built-in potential and a reduction in recombination activity compared with the reference device. Overall, these results demonstrate that CuGaSe2 can play a beneficial dual role as both an auxiliary absorber and an interfacial energy-modulating layer in Sb2Se3-based thin-film solar cells.