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<p>Interface electronic states at perovskite oxide interfaces represent an important class of heterostructures that exhibit a wide range of functional properties. The circular photogalvanic effect (CPGE), which originates from microscopic inversion symmetry breaking and the resulting spin-orbit coupling, is a significant phenomenon observed in this system. In this study, we investigated the CPGE at amorphous-LaAlO₃/ SrTiO₃ (a-LAO/STO) interfaces under 450&#xa0;nm, 532&#xa0;nm, and 780&#xa0;nm illumination. The CPGE photocurrent demonstrates gate-tunable characteristics, showing linear dependence on back-gate voltage (<i>V</i><sub><i>G</i></sub>) and exhibiting polarity reversal under negative <i>V</i><sub><i>G</i></sub>. These effects arise from illumination-driven migration of oxygen vacancies and electrons. Under negative <i>V</i><sub><i>G</i></sub>, the migration induces reversed asymmetry distribution of oxygen vacancies and electrons, leading to photocurrent direction reversal. The opposite migration of oxygen vacancies and electrons expands the width of photon-absorbing region, producing the observed linear <i>V</i><sub><i>G</i></sub> dependence.</p>

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Gate tunable circular photogalvanic effect at amorphous-LaAlO3/SrTiO3 interfaces

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  • 发表日期：

    2026年7月22日

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  • Chengjian Li,
  • Xiaowei Wang,
  • Guoru Li,
  • Jiajun Guo

摘要

Interface electronic states at perovskite oxide interfaces represent an important class of heterostructures that exhibit a wide range of functional properties. The circular photogalvanic effect (CPGE), which originates from microscopic inversion symmetry breaking and the resulting spin-orbit coupling, is a significant phenomenon observed in this system. In this study, we investigated the CPGE at amorphous-LaAlO₃/ SrTiO₃ (a-LAO/STO) interfaces under 450 nm, 532 nm, and 780 nm illumination. The CPGE photocurrent demonstrates gate-tunable characteristics, showing linear dependence on back-gate voltage (VG) and exhibiting polarity reversal under negative VG. These effects arise from illumination-driven migration of oxygen vacancies and electrons. Under negative VG, the migration induces reversed asymmetry distribution of oxygen vacancies and electrons, leading to photocurrent direction reversal. The opposite migration of oxygen vacancies and electrons expands the width of photon-absorbing region, producing the observed linear VG dependence.