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<p>A novel technique is presented to enhance the electrical characteristics of Silicon-On-Insulator Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors (SOI-LDMOSFETs). The concentration of the electric field in localized regions of the drift area increases susceptibility to breakdown. The proposed technique employs a surface groove within the drift region to redistribute the electric field lines uniformly, thereby reducing peak field intensity. Figure-of-merit analysis reveals a 70% improvement with the Surface Groove SOI-LDMOSFET (SG-SOI-LDMOSFET), achieving 4.8 MW/cm<sup>2</sup>. These enhancements are demonstrated using the 2D device simulations. The technique improves device performance significantly without adding complexity to the fabrication process. </p>

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Outstanding figure-of-merit in SOI-LDMOSFET by a surface groove technique

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月30日

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  • Ali Shokouhi Shoormasti,
  • Abdollah Abbasi,
  • Ali A. Orouji

摘要

A novel technique is presented to enhance the electrical characteristics of Silicon-On-Insulator Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors (SOI-LDMOSFETs). The concentration of the electric field in localized regions of the drift area increases susceptibility to breakdown. The proposed technique employs a surface groove within the drift region to redistribute the electric field lines uniformly, thereby reducing peak field intensity. Figure-of-merit analysis reveals a 70% improvement with the Surface Groove SOI-LDMOSFET (SG-SOI-LDMOSFET), achieving 4.8 MW/cm2. These enhancements are demonstrated using the 2D device simulations. The technique improves device performance significantly without adding complexity to the fabrication process.