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<p>Photoelectronic and image sensors based on perovskite hybrid heterojunctions play a significant role in defense, navigation, security surveillance, and space applications. This article reports, for the first time, the fabrication of a CsSnI<sub>3</sub>/GaN hybrid photodetector architecture designed to exhibit superior broadband photon absorption across the ultraviolet-to-infrared regime, without the need for additional charge-transport, encapsulation, or interfacial layers. First-principles calculations based on Density Functional Theory were implemented to investigate the electronic properties of the CsSnI<sub>3</sub>/GaN heterostructure.&#xa0;X-ray diffraction and scanning electron microscopy reveal that the controlled addition of ascorbic acid and 2-methylaminopyridine promotes the growth of a highly crystalline CsSnI<sub>3</sub> layer with uniform morphology and larger grains on the GaN substrate. . Cross-sectional scanning electron microscopy and transmission electron microscopy reveal a compact, well-defined heterointerface that promotes efficient carrier transport. The absorption spectra show a range extended towards the infrared region. Photoluminescence spectra show quenched emission intensity, while time-resolved photoluminescence and electrochemical impedance spectroscopy measurements reveal a shorter carrier lifetime in the CsSnI<sub>3</sub>/GaN heterojunction, confirming suppressed recombination losses, more efficient separation of photogenerated carriers, and reduced carrier trapping at interfacial defects. Photoelectric measurements further prove dual-mode operation (self-powered and biased) with broad spectral photoresponsivity from the ultraviolet to the near-infrared. Under self-powered mode, the photosensitivity reaches 0.11&#xa0;A/W at 2.5 mW/cm<sup>2</sup>, with a specific detectivity of 7.5 × 10<sup>10</sup> Jones, a noise-equivalent power of 4 × 10<sup>− 12</sup>&#xa0;W/√Hz, a linear dynamic range of 100.4 dB, and a rise/decay time ratio of 1.15/2.1 ms. Under − 2 V external bias, the responsivity is further enhanced to 4.3&#xa0;A/W with a specific detectivity of 8 × 10<sup>12</sup> Jones, indicating a faster response time. These findings establish this hybrid heterostructure as a promising platform to integrate lead-free Sn-based perovskites on large-scale substrates for high-efficiency, sustainable, and stable hybrid photodetector applications.</p>

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First demonstration of lead free CsSnI3 on GaN hybrid heterostructure for dual mode, broadband and self powering photo sensing

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月30日

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  • Tarak Hidouri,
  • Nouhaila El Hidaoui,
  • Nabila Jarmouni,
  • Sergii Golovynskyi

摘要

Photoelectronic and image sensors based on perovskite hybrid heterojunctions play a significant role in defense, navigation, security surveillance, and space applications. This article reports, for the first time, the fabrication of a CsSnI3/GaN hybrid photodetector architecture designed to exhibit superior broadband photon absorption across the ultraviolet-to-infrared regime, without the need for additional charge-transport, encapsulation, or interfacial layers. First-principles calculations based on Density Functional Theory were implemented to investigate the electronic properties of the CsSnI3/GaN heterostructure. X-ray diffraction and scanning electron microscopy reveal that the controlled addition of ascorbic acid and 2-methylaminopyridine promotes the growth of a highly crystalline CsSnI3 layer with uniform morphology and larger grains on the GaN substrate. . Cross-sectional scanning electron microscopy and transmission electron microscopy reveal a compact, well-defined heterointerface that promotes efficient carrier transport. The absorption spectra show a range extended towards the infrared region. Photoluminescence spectra show quenched emission intensity, while time-resolved photoluminescence and electrochemical impedance spectroscopy measurements reveal a shorter carrier lifetime in the CsSnI3/GaN heterojunction, confirming suppressed recombination losses, more efficient separation of photogenerated carriers, and reduced carrier trapping at interfacial defects. Photoelectric measurements further prove dual-mode operation (self-powered and biased) with broad spectral photoresponsivity from the ultraviolet to the near-infrared. Under self-powered mode, the photosensitivity reaches 0.11 A/W at 2.5 mW/cm2, with a specific detectivity of 7.5 × 1010 Jones, a noise-equivalent power of 4 × 10− 12 W/√Hz, a linear dynamic range of 100.4 dB, and a rise/decay time ratio of 1.15/2.1 ms. Under − 2 V external bias, the responsivity is further enhanced to 4.3 A/W with a specific detectivity of 8 × 1012 Jones, indicating a faster response time. These findings establish this hybrid heterostructure as a promising platform to integrate lead-free Sn-based perovskites on large-scale substrates for high-efficiency, sustainable, and stable hybrid photodetector applications.