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<p>This research investigates the impact of carbonous and metallic additives on the microstructure of high entropy carbide (HEC) and medium entropy in-situ boride (ME-ISB) composite layers. The HEC layer, made from TaCHfCZrCTiCVC with Gr and Si additives, and the ME-ISB layer, composed of HfO<sub>2</sub>ZrO<sub>2</sub>TiO<sub>2</sub> with nano carbon black (C.B<sub>n</sub>) and B<sub>4</sub>C, were consolidated using spark plasma sintering (SPS) at 2000&#xa0;°C under 40&#xa0;MPa for 10&#xa0;min. Bulk density was measured via the Archimedes method, and microstructural analysis was conducted using field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). The findings revealed that the HEC layer has a higher sinterability (99.7%) compared to the ME-ISB layer (78.4%). Hardness tests showed the HEC layer (≈ 15 GPa) is significantly harder than the ME-ISB layer (≈ 1.2 GPa), with average grain sizes of 430 ± 150&#xa0;nm for HEC and 200 ± 100&#xa0;nm for ME-ISB.</p>

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Composite design and property assessment of high and medium entropy layers in TaCHfCZrCTiCVC/HfB₂ZrB₂TiB₂ system

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月18日

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  • Ekhlas Qays Al-shawway,
  • Zohre Balak

摘要

This research investigates the impact of carbonous and metallic additives on the microstructure of high entropy carbide (HEC) and medium entropy in-situ boride (ME-ISB) composite layers. The HEC layer, made from TaCHfCZrCTiCVC with Gr and Si additives, and the ME-ISB layer, composed of HfO2ZrO2TiO2 with nano carbon black (C.Bn) and B4C, were consolidated using spark plasma sintering (SPS) at 2000 °C under 40 MPa for 10 min. Bulk density was measured via the Archimedes method, and microstructural analysis was conducted using field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). The findings revealed that the HEC layer has a higher sinterability (99.7%) compared to the ME-ISB layer (78.4%). Hardness tests showed the HEC layer (≈ 15 GPa) is significantly harder than the ME-ISB layer (≈ 1.2 GPa), with average grain sizes of 430 ± 150 nm for HEC and 200 ± 100 nm for ME-ISB.