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<p>Direct epitaxial growth of gallium antimonide (GaSb) on silicon (Si) holds the potential for creating new applications in mid-infrared (MIR) silicon photonics. However, this is challenging due to the significant physical dissimilarities between the two materials creating various crystal imperfections and defects. The main challenge is the generation of threading dislocations arising from the high lattice mismatch. To successfully implement GaSb-based devices on silicon a major engineering breakthrough is required to significantly reduce the dislocation density. This work presents a study of high quality GaSb epilayers on Si with defect density of 6 × 10<sup>6</sup> cm<sup>-2</sup> grown using molecular beam epitaxy (MBE). This was achieved using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step GaSb growth temperature procedure and strained dislocation filter superlattices (DFSLs). The superlattice (SL) layers were carefully engineered and positioned to prevent the generation of new defects while blocking the vertical propagation of pre-existing ones. The successful reduction of the threading dislocations and excellent crystalline quality was identified through a significant increase of the photoluminescence intensity.</p>

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Threading dislocation reduction in heteroepitaxial GaSb based superlattices grown on silicon

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月3日

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  • Evangelia Delli,
  • Mathew Bentley,
  • Niall Mulholland,
  • Peter D. Hodgson,
  • Maria de la Mata,
  • Sergio I. Molina,
  • Richard Beanland,
  • Magnus C. Wagener,
  • Johannes R. Botha,
  • Andrew R. J. Marshall,
  • Peter J. Carrington

摘要

Direct epitaxial growth of gallium antimonide (GaSb) on silicon (Si) holds the potential for creating new applications in mid-infrared (MIR) silicon photonics. However, this is challenging due to the significant physical dissimilarities between the two materials creating various crystal imperfections and defects. The main challenge is the generation of threading dislocations arising from the high lattice mismatch. To successfully implement GaSb-based devices on silicon a major engineering breakthrough is required to significantly reduce the dislocation density. This work presents a study of high quality GaSb epilayers on Si with defect density of 6 × 106 cm-2 grown using molecular beam epitaxy (MBE). This was achieved using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step GaSb growth temperature procedure and strained dislocation filter superlattices (DFSLs). The superlattice (SL) layers were carefully engineered and positioned to prevent the generation of new defects while blocking the vertical propagation of pre-existing ones. The successful reduction of the threading dislocations and excellent crystalline quality was identified through a significant increase of the photoluminescence intensity.