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<p>Lead halide perovskites are widely used in optoelectronic applications but are toxic due to their lead content. To explore viable, lead-free alternatives, we investigate the properties of Cs<sub>2</sub>CeAgCl<sub>6</sub>, a double perovskite halide, for its potential use in resistive switching and optoelectronic devices. Using the WIEN2K code, we computed the structural, elastic, electrical, and optical properties of this compound. Our analysis reveals that Cs<sub>2</sub>CeAgCl<sub>6</sub> is mechanically stable and ductile, with favorable mechanical properties. The electronic band structure was calculated using the GGA + U approximation, showing direct band gaps of 3.22&#xa0;eV and 3.07&#xa0;eV in the spin-up and spin-down channels, respectively. These findings suggest that Cs<sub>2</sub>CeAgCl<sub>6</sub> is a promising candidate for resistive switching in resistive random-access memory (RRAM) devices. Additionally, its wide direct bandgap and strong optical response in the ultraviolet region make it suitable for UV photodetectors, optoelectronic switches, and optical sensors. Overall, the material exhibits stable and reproducible switching behavior, making it an excellent choice for non-volatile RRAM applications.</p>

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Investigation of lead-free double perovskite Cs₂CeAgCl₆ for resistive switching and optoelectronic applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月22日

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  • Abdul Majid,
  • Salman Ahmed,
  • Naila Maqbool,
  • Noorullah Noori,
  • Mohammad Nasir,
  • Sana Imtiaz,
  • F. F. Al-Harbi,
  • Gafur Abdulakimov,
  • Younas Ahmad,
  • M. Ijaz Khan

摘要

Lead halide perovskites are widely used in optoelectronic applications but are toxic due to their lead content. To explore viable, lead-free alternatives, we investigate the properties of Cs2CeAgCl6, a double perovskite halide, for its potential use in resistive switching and optoelectronic devices. Using the WIEN2K code, we computed the structural, elastic, electrical, and optical properties of this compound. Our analysis reveals that Cs2CeAgCl6 is mechanically stable and ductile, with favorable mechanical properties. The electronic band structure was calculated using the GGA + U approximation, showing direct band gaps of 3.22 eV and 3.07 eV in the spin-up and spin-down channels, respectively. These findings suggest that Cs2CeAgCl6 is a promising candidate for resistive switching in resistive random-access memory (RRAM) devices. Additionally, its wide direct bandgap and strong optical response in the ultraviolet region make it suitable for UV photodetectors, optoelectronic switches, and optical sensors. Overall, the material exhibits stable and reproducible switching behavior, making it an excellent choice for non-volatile RRAM applications.