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<p>Thermally evaporated Azure A chloride thin films were deposited on fluorine-doped tin oxide (FTO) substrates with thicknesses ranging from 75 to 175&#xa0;nm, and their structural, optical, and optoelectronic properties were systematically investigated. X-ray diffraction analysis indicates that the deposited films exhibit an amorphous structure, while optical measurements reveal strong absorption in the visible region with absorption coefficients on the order of 10<sup>4</sup>-10<sup>5</sup>&#xa0;cm<sup>-1</sup>. The optical bandgap shows a clear thickness dependence, with the lower-energy transition increasing from 1.27 to 1.57&#xa0;eV and the higher-energy transition decreasing from 3.5 to 2.8&#xa0;eV as the film thickness increases. Dispersion analysis reveals thickness-dependent refractive index and dielectric response, reflecting enhanced photon–matter interactions in thicker films. The optical conductivity and related parameters further confirm the influence of film thickness on charge carrier excitation under optical illumination. In addition, A simple Au/Azure A chloride/FTO device was fabricated to demonstrate the photoresponse behavior of the films under illumination. These results highlight the suitability of Azure A chloride thin films for optical and photonic applications.</p>

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Structural, optical, and photodetection characteristics of thermally evaporated Azure A chloride/FTO thin films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月11日

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  • E. F. M. El-Zaidia,
  • H. A. M. Ali,
  • Maer Alanazi,
  • Marwah A. Alsharif,
  • Munirah A. A. Alanazi,
  • A. A. A. Darwish

摘要

Thermally evaporated Azure A chloride thin films were deposited on fluorine-doped tin oxide (FTO) substrates with thicknesses ranging from 75 to 175 nm, and their structural, optical, and optoelectronic properties were systematically investigated. X-ray diffraction analysis indicates that the deposited films exhibit an amorphous structure, while optical measurements reveal strong absorption in the visible region with absorption coefficients on the order of 104-105 cm-1. The optical bandgap shows a clear thickness dependence, with the lower-energy transition increasing from 1.27 to 1.57 eV and the higher-energy transition decreasing from 3.5 to 2.8 eV as the film thickness increases. Dispersion analysis reveals thickness-dependent refractive index and dielectric response, reflecting enhanced photon–matter interactions in thicker films. The optical conductivity and related parameters further confirm the influence of film thickness on charge carrier excitation under optical illumination. In addition, A simple Au/Azure A chloride/FTO device was fabricated to demonstrate the photoresponse behavior of the films under illumination. These results highlight the suitability of Azure A chloride thin films for optical and photonic applications.