<p>Manganese Mercury Thiocyanate (MMTC) and Manganese Mercury Thiocyanate Di Methyl Sulfoxide (MMTD) crystals were prepared from aqueous solution using a slow evaporation process. The pure MMTC and MMTD were bombarded with electrons of 8&#xa0;MeV energy in the free air environment. The samples were kept at a distance of 30&#xa0;cm from the beam exit point, where an almost uniform electron beam distribution exists for an area of 8&#xa0;cm x 8&#xa0;cm. The dose rate was adjusted with a current of 20&#xa0;mA, and the accelerator was operated in pulsed mode at a repetition frequency of 50&#xa0;Hz. The samples were exposed to a graded electron beam dose of 6&#xa0;kGy and 8&#xa0;kGy. Electron beam irradiation is an efficient process whereby high-energy electrons are embedded into a pristine crystal lattice to induce changes in its microscopic structural and electronic environment. The changes after electron beam irradiation are compared with those of pure crystals for Bandgap energy, Urbach energy, Photoconductivity and AC conductivity, and the graphs and tables of comparison are added.</p>

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Effect of electron irradiation on the optical and electrical properties of Manganese Mercury Thiocyanate and Manganese Mercury Thiocyanate Di Methyl Sulfoxide Crystals

  • Jisma Jose,
  • R. Santhosh Kumar,
  • Sandeep Suresh,
  • Eldo Abraham Thomas,
  • G. Sreekanth,
  • Ginson P. Joseph

摘要

Manganese Mercury Thiocyanate (MMTC) and Manganese Mercury Thiocyanate Di Methyl Sulfoxide (MMTD) crystals were prepared from aqueous solution using a slow evaporation process. The pure MMTC and MMTD were bombarded with electrons of 8 MeV energy in the free air environment. The samples were kept at a distance of 30 cm from the beam exit point, where an almost uniform electron beam distribution exists for an area of 8 cm x 8 cm. The dose rate was adjusted with a current of 20 mA, and the accelerator was operated in pulsed mode at a repetition frequency of 50 Hz. The samples were exposed to a graded electron beam dose of 6 kGy and 8 kGy. Electron beam irradiation is an efficient process whereby high-energy electrons are embedded into a pristine crystal lattice to induce changes in its microscopic structural and electronic environment. The changes after electron beam irradiation are compared with those of pure crystals for Bandgap energy, Urbach energy, Photoconductivity and AC conductivity, and the graphs and tables of comparison are added.