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<p>Ultra-low linewidth widely tunable lasers capable of emission by design from the visible to shortwave infrared are important building blocks for a range of precision applications including quantum sensing and computing, timekeeping, metrology, optical clocks, and fiber sensing. Importantly, integration of precision tunable lasers in a CMOS foundry compatible platform that can support higher level integration with other components, such as low loss silicon nitride (Si<sub>3</sub>N<sub>4</sub>), is an important step towards full system on chip solutions. Integration of the III-V gain material with the Si<sub>3</sub>N<sub>4</sub> tunable cavity is a critical step towards this goal and must be achieved through a low-cost, manufacturable, and reliable process. However, this co-integration has remained challenging due to tight alignment tolerances and mode mismatches between the semiconductor and silicon nitride waveguides. 3D-printed photonic wire bonding (PWB) offers a robust approach to hybrid integration due to the relaxation of waveguide alignment tolerances and the inherent low-loss mode matching. In this work, we demonstrate a narrow linewidth PWB-integrated Si<sub>3</sub>N<sub>4</sub> external cavity tunable laser (ECTL) with a 3.75—7.77&#xa0;Hz fundamental linewidth measured across a 60&#xa0;nm tuning range and a 1.27&#xa0;kHz integral linewidth: a reduction of nearly three orders of magnitude in fundamental linewidth compared with previously reported PWB-integrated ECTLs in Si<sub>3</sub>N<sub>4</sub>. The PWB process has the potential to realize reliable and manufacturable tunable lasers on-chip with the performance of table-top fiber lasers. These results establish photonic wirebonding as a viable integration pathway for precision photonic systems, enabling portable, scalable, and cost-effective solutions for quantum, low-noise microwave, and sensing applications.</p>

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Narrow-linewidth photonic wirebonded silicon nitride external cavity tunable laser

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月1日

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  • David A. S. Heim,
  • Gar-Wing Truong,
  • Debapam Bose,
  • Eduardo Diaz,
  • Juan Ramirez,
  • Jes Sherman,
  • Gordon Morrison,
  • Daniel J. Blumenthal

摘要

Ultra-low linewidth widely tunable lasers capable of emission by design from the visible to shortwave infrared are important building blocks for a range of precision applications including quantum sensing and computing, timekeeping, metrology, optical clocks, and fiber sensing. Importantly, integration of precision tunable lasers in a CMOS foundry compatible platform that can support higher level integration with other components, such as low loss silicon nitride (Si3N4), is an important step towards full system on chip solutions. Integration of the III-V gain material with the Si3N4 tunable cavity is a critical step towards this goal and must be achieved through a low-cost, manufacturable, and reliable process. However, this co-integration has remained challenging due to tight alignment tolerances and mode mismatches between the semiconductor and silicon nitride waveguides. 3D-printed photonic wire bonding (PWB) offers a robust approach to hybrid integration due to the relaxation of waveguide alignment tolerances and the inherent low-loss mode matching. In this work, we demonstrate a narrow linewidth PWB-integrated Si3N4 external cavity tunable laser (ECTL) with a 3.75—7.77 Hz fundamental linewidth measured across a 60 nm tuning range and a 1.27 kHz integral linewidth: a reduction of nearly three orders of magnitude in fundamental linewidth compared with previously reported PWB-integrated ECTLs in Si3N4. The PWB process has the potential to realize reliable and manufacturable tunable lasers on-chip with the performance of table-top fiber lasers. These results establish photonic wirebonding as a viable integration pathway for precision photonic systems, enabling portable, scalable, and cost-effective solutions for quantum, low-noise microwave, and sensing applications.