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<p>A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator. The MIS dual-channel HEMT (IDC-HEMT) employs two AlGaN/GaN heterojunction layers to form two two-dimensional electron gas (2DEG) layers. Electrons in the lower 2DEG layer induce a continuous negative bias body effect on the upper channel, shifting the threshold voltage (<i>V</i><sub>th</sub>) in the positive direction and enabling E-mode operation. This structure achieves E-mode operation without requiring additional complex fabrication steps, such as the precise etching processes used in recessed gate or p-GaN gate designs. The 2DEG sheet density in the upper 2DEG of the MIS single-channel HEMT (ISC-HEMT) and IDC-HEMT are 5.49 × 10<sup>12</sup> cm<sup>− 2</sup> and 3.43 × 10<sup>12</sup> cm<sup>− 2</sup>, respectively, while the lower 2DEG in the IDC-HEMT has sheet density of 0.76 × 10<sup>12</sup> cm<sup>− 2</sup>, all obtained in the access region with a gate and drain bias of 0&#xa0;V. Due to the reduced 2DEG sheet density in the upper 2DEG, the proposed IDC-HEMT exhibits degraded performance in on-resistance (<i>R</i><sub>on</sub>), with values 28.7 Ω∙mm, respectively, compared to the ISC-HEMT, which has and a <i>R</i><sub>on</sub> of 22.7 Ω mm. However, the <i>V</i><sub>th</sub> of the ISC-HEMT is − 1.41&#xa0;V, while that of the IDC-HEMT is 0.25&#xa0;V, demonstrating a significant positive shift of 1.66&#xa0;V. This confirms that the proposed IDC-HEMT can operate in E-mode.</p>

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Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation

  • 期刊论文

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  • 发表日期：

    2026年2月25日

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  • Kang Hee Lee,
  • Yeonsil Yang,
  • Junseok Heo,
  • Jang Hyun Kim

摘要

A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator. The MIS dual-channel HEMT (IDC-HEMT) employs two AlGaN/GaN heterojunction layers to form two two-dimensional electron gas (2DEG) layers. Electrons in the lower 2DEG layer induce a continuous negative bias body effect on the upper channel, shifting the threshold voltage (Vth) in the positive direction and enabling E-mode operation. This structure achieves E-mode operation without requiring additional complex fabrication steps, such as the precise etching processes used in recessed gate or p-GaN gate designs. The 2DEG sheet density in the upper 2DEG of the MIS single-channel HEMT (ISC-HEMT) and IDC-HEMT are 5.49 × 1012 cm− 2 and 3.43 × 1012 cm− 2, respectively, while the lower 2DEG in the IDC-HEMT has sheet density of 0.76 × 1012 cm− 2, all obtained in the access region with a gate and drain bias of 0 V. Due to the reduced 2DEG sheet density in the upper 2DEG, the proposed IDC-HEMT exhibits degraded performance in on-resistance (Ron), with values 28.7 Ω∙mm, respectively, compared to the ISC-HEMT, which has and a Ron of 22.7 Ω mm. However, the Vth of the ISC-HEMT is − 1.41 V, while that of the IDC-HEMT is 0.25 V, demonstrating a significant positive shift of 1.66 V. This confirms that the proposed IDC-HEMT can operate in E-mode.