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<p>Achieving uniform, high-quality, and thickness-controlled two-dimensional semiconductor films at the wafer scale remains a critical challenge for practical device integration. This work presents a scalable synthesis method for MoS<sub>2</sub> films on Si/SiO<sub>2</sub> wafers using a three-step conversion (3SC) process. The process comprises the deposition of an amorphous MoO<sub>x</sub> film, low-temperature high-pressure H₂S annealing for sulfurization, and high-temperature Ar annealing to enhance crystallinity. Precise thickness control, from monolayer to ~ 20&#xa0;nm, is realized by adjusting the initial MoO<sub>x</sub> thickness. A higher oxygen content in MoO<sub>x</sub> improves sulfurization efficiency and promotes uniform conversion to MoS<sub>2</sub>. Structural and optical characterizations using Raman and Photoluminescence (PL) spectroscopy confirm enhanced crystallinity, with a PL-FWHM narrowed to ~ 0.08&#xa0;eV. The 3SC method achieves uniform MoS<sub>2</sub> coverage across the entire wafer, demonstrating its compatibility with large-area fabrication and its potential for future electronics and optoelectronics applications.</p>

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Wafer-scale formation of MoS2 with controlled thickness and high uniformity via conversion of MoOx using H2S sulfurization and subsequent crystallization

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月5日

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  • Naoya Okada,
  • Shinichi Tanabe,
  • Hitoshi Miura,
  • Hao Cheng,
  • Yumin Huang,
  • Hisashi Warashina,
  • Atsuki Fukazawa,
  • Hiroki Maehara,
  • Toshifumi Irisawa

摘要

Achieving uniform, high-quality, and thickness-controlled two-dimensional semiconductor films at the wafer scale remains a critical challenge for practical device integration. This work presents a scalable synthesis method for MoS2 films on Si/SiO2 wafers using a three-step conversion (3SC) process. The process comprises the deposition of an amorphous MoOx film, low-temperature high-pressure H₂S annealing for sulfurization, and high-temperature Ar annealing to enhance crystallinity. Precise thickness control, from monolayer to ~ 20 nm, is realized by adjusting the initial MoOx thickness. A higher oxygen content in MoOx improves sulfurization efficiency and promotes uniform conversion to MoS2. Structural and optical characterizations using Raman and Photoluminescence (PL) spectroscopy confirm enhanced crystallinity, with a PL-FWHM narrowed to ~ 0.08 eV. The 3SC method achieves uniform MoS2 coverage across the entire wafer, demonstrating its compatibility with large-area fabrication and its potential for future electronics and optoelectronics applications.