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<p>We reported vertically-stacking architecture of Si-Si<sub>3</sub>N<sub>4</sub> embedded Ge quantum dots (QDs) array for quantum nanophotonics. Salient features of ordered, stacking Ge QDs lie in good control over the QD size, spherical-shape, and spatial location without relying on lithographic definition. Mie-mediated interaction of Ge QDs with Si nanolayers is characterized by edge enhanced Raman scattering (EERS) of Si and photoluminescence of Ge QDs at the visible−near infrared bands. Ge QDs PIN diodes with 40&#xa0;nm-wide intrinsic region showcase high gain× bandwidth &gt; 10<sup>7</sup> GHz A/A at zero bias for self-powered, energy-efficient photodetection.</p>

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Mie-mediated edge-enhanced Raman scattering of vertically-stacking ge quantum-dots/Si-SiN array for enhancing photoluminescence and photodetection

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  • 出版模式：

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  • 发表日期：

    2026年1月23日

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  • Shih-Hsiang Yang,
  • Maria Isabel Alonso,
  • Horng-Chih Lin,
  • Pei-Wen Li

摘要

We reported vertically-stacking architecture of Si-Si3N4 embedded Ge quantum dots (QDs) array for quantum nanophotonics. Salient features of ordered, stacking Ge QDs lie in good control over the QD size, spherical-shape, and spatial location without relying on lithographic definition. Mie-mediated interaction of Ge QDs with Si nanolayers is characterized by edge enhanced Raman scattering (EERS) of Si and photoluminescence of Ge QDs at the visible−near infrared bands. Ge QDs PIN diodes with 40 nm-wide intrinsic region showcase high gain× bandwidth > 107 GHz A/A at zero bias for self-powered, energy-efficient photodetection.